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AM29LV256M ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 3 Page - Advanced Micro Devices

๋ถ€ํ’ˆ๋ช… AM29LV256M
์ƒ์„ธ๋‚ด์šฉ  256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
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์ œ์กฐ์‚ฌ  AMD [Advanced Micro Devices]
ํ™ˆํŽ˜์ด์ง€  http://www.amd.com
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AM29LV256M ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 3 Page - Advanced Micro Devices

 
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DATASHEET
This Data Sheet states AMDโ€™s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication# 25263
Rev: C Amendment/+3
Issue Date: September 15, 2003
Refer to AMDโ€™s Website (www.amd.com) for the latest information.
Am29LV256M
256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBit
TM 3.0 Volt-only
Uniform Sector Flash Memory with VersatileI/O
TM Control
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
Single power supply operation
โ€” 3 volt read, erase, and program operations
VersatileI/O
TM control
โ€” Device generates data output voltages and tolerates
data input voltages on the CE# and DQ inputs/outputs
as determined by the voltage on the V
IO pin; operates
from 1.65 to 3.6 V
Manufactured on 0.23 ยตm MirrorBit process
technology
SecSi
TM (Secured Silicon) Sector region
โ€” 128-word/256-byte sector for permanent, secure
identification through an 8-word/16-byte random
Electronic Serial Number, accessible through a
command sequence
โ€” May be programmed and locked at the factory or by
the customer
Flexible sector architecture
โ€” Five hundred twelve 32 Kword (64 Kbyte) sectors
Compatibility with JEDEC standards
โ€” Provides pinout and software compatibility for
single-power supply flash, and superior inadvertent
write protection
Minimum 100,000 erase cycle guarantee per sector
20-year data retention at 125ยฐC
PERFORMANCE CHARACTERISTICS
High performance
โ€” 100 ns access time
โ€” 30 ns page read times
โ€” 0.5 s typical sector erase time
โ€” 15 ยตs typical effective write buffer word programming
time: 16-word/32-byte write buffer reduces overall
programming time for multiple-word updates
โ€” 4-word/8-byte page read buffer
โ€” 16-word/32-byte write buffer
Low power consumption (typical values at 3.0 V, 5
MHz)
โ€” 13 mA typical active read current
โ€” 50 mA typical erase/program current
โ€” 1 ยตA typical standby mode current
Package options
โ€” 56-pin TSOP
โ€” 64-ball Fortified BGA
SOFTWARE & HARDWARE FEATURES
Software features
โ€” Program Suspend & Resume: read other sectors
before programming operation is completed
โ€” Erase Suspend & Resume: read/program other
sectors before an erase operation is completed
โ€” Data# polling & toggle bits provide status
โ€” Unlock Bypass Program command reduces overall
multiple-word or byte programming time
โ€” CFI (Common Flash Interface) compliant: allows host
system to identify and accommodate multiple flash
devices
Hardware features
โ€” Sector Group Protection: hardware-level method of
preventing write operations within a sector group
โ€” Temporary Sector Group Unprotect: V
ID-level method
of changing code in locked sector groups
โ€” WP#/ACC input accelerates programming time
(when high voltage is applied) for greater throughput
during system production. Protects first or last sector
regardless of sector protection settings
โ€” Hardware reset input (RESET#) resets device
โ€” Ready/Busy# output (RY/BY#) detects program or
erase cycle completion


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