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AM29LV640MU ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 3 Page - Advanced Micro Devices

๋ถ€ํ’ˆ๋ช… AM29LV640MU
์ƒ์„ธ๋‚ด์šฉ  64 Megabit (4 M x 16-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with
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์ œ์กฐ์‚ฌ  AMD [Advanced Micro Devices]
ํ™ˆํŽ˜์ด์ง€  http://www.amd.com
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2Am29LV640MU
June 12, 2003
AD V A NCE
INF O R M A T IO N
GENERAL DESCRIPTION
The Am29LV640MU is a 64 Mbit, 3.0 volt single power
supply flash memory device organized as 4,194,304
words. The device has a 16-bit only data bus, and can
be programmed either in the host system or in stan-
dard EPROM programmers.
An access time of 90, 100, 110, or 120 ns is available.
Note that each access time has a specific operating
voltage range (V
CC) and an I/O voltage range (VIO), as
specified in the Product Selector Guide and the Order-
ing Information sections. The device is offered in a
63-ball Fine-Pitch BGA or 64-ball Fortified BGA pack-
age. Each device has separate chip enable (CE#),
write enable (WE#) and output enable (OE#) controls.
Each device requires only a single 3.0 volt power
supply for both read and write functions. In addition to
a VCC input, a high-voltage accelerated program
(ACC) input provides shorter programming times
through increased current. This feature is intended to
facilitate factory throughput during system production,
but may also be used in the field if desired.
The device is entirely command set compatible with
the JEDEC single-power-supply Flash standard.
Commands are written to the device using standard
microprocessor write timing. Write cycles also inter-
nally latch addresses and data needed for the pro-
gramming and erase operations.
The sector erase architecture allows memory sec-
tors to be erased and reprogrammed without affecting
the data contents of other sectors. The device is fully
erased when shipped from the factory.
Device programming and erasure are initiated through
command sequences. Once a program or erase oper-
ation has begun, the host system need only poll the
DQ7 (Data# Polling) or DQ6 (toggle) status bits or
monitor the Ready/Busy# (RY/BY#) output to deter-
mine whether the operation is complete. To facilitate
programming, an Unlock Bypass mode reduces com-
mand sequence overhead by requiring only two write
cycles to program data instead of four.
The VersatileI/Oโ„ข (VIO) control allows the host sys-
tem to set the voltage levels that the device generates
and tolerates on the CE# control input and DQ I/Os to
the same voltage level that is asserted on the V
IO pin.
Refer to the Ordering Information section for valid V
IO
options.
Hardware data protection measures include a low
V
CC detector that automatically inhibits write opera-
tions during power transitions. The hardware sector
protection feature disables both program and erase
operations in any combination of sectors of memory.
This can be achieved in-system or via programming
equipment.
The Erase Suspend/Erase Resume feature allows
the host system to pause an erase operation in a
given sector to read or program any other sector and
then complete the erase operation. The Program
Suspend/Program Resume feature enables the host
system to pause a program operation in a given sector
to read any other sector and then complete the pro-
gram operation.
The hardware RESET# pin terminates any operation
in progress and resets the device, after which it is then
ready for a new operation. The RESET# pin may be
tied to the system reset circuitry. A system reset would
thus also reset the device, enabling the host system to
read boot-up firmware from the Flash memory device.
The device redu ces power consumptio n in the
standby mode when it detects specific voltage levels
on CE# and RESET#, or when addresses have been
stable for a specified period of time.
The SecSi
๏ฃช (Secured Silicon) Sector provides a
128-word area for code or data that can be perma-
nently protected. Once this sector is protected, no fur-
ther changes within the sector can occur.
AMD MirrorBit flash technology combines years of
Flash memory manufacturing experience to produce
the highest levels of quality, reliability and cost effec-
tiveness. The device electrically erases all bits within a
sector simultaneously via hot-hole assisted erase. The
data is programmed using hot electron injection.


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AM29LV2562M512 Megabit 16 M x 32-Bit/32 M x 16-Bit MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control 1 2 3 4 5 MoreSPANSION
AM29LV256M256 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control 1 2 3 4 5 MoreAdvanced Micro Devices
AM29LV128MH128 Megabit 8 M x 16-Bit/16 M x 8-Bit MirrorBitโ„ข 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control 1 2 3 4 5 MoreAdvanced Micro Devices
AM29LV642D128 Megabit 8 M x 16-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control 1 2 3 4 5 MoreAdvanced Micro Devices
AM29LV033MU32 Megabit 4 M x 8-Bit MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control 1 2 3 4 5 MoreAdvanced Micro Devices
AM29LV065M64 Megabit 8 M x 8-Bit MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control 1 2 3 4 5 MoreAdvanced Micro Devices
AM29LV640D64 Megabit 4 M x 16-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control 1 2 3 4 5 MoreAdvanced Micro Devices
AM29LV320MT32 Megabit 2 M x 16-Bit/4 M x 8-Bit MirrorBit 3.0 Volt-only Boot Sector Flash Memory 1 2 3 4 5 MoreAdvanced Micro Devices
AM29LV160M16 Megabit 2 M x 8-Bit/1 M x 16-Bit MirrorBit 3.0 Volt-only Boot Sector Flash Memory 1 2 3 4 5 MoreAdvanced Micro Devices
EN29LV641H64 Megabit 4096K x 16-bit Flash Memory CMOS 3.0 Volt-only Uniform Sector Flash Memory 1 2 3 4 5 MoreEon Silicon Solution Inc.

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