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AM29LV640MU101PCI 데이터시트(PDF) 2 Page - Advanced Micro Devices |
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AM29LV640MU101PCI 데이터시트(HTML) 2 Page - Advanced Micro Devices |
2 / 58 page ADVANCE INFORMATION This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.6/13/03 Publication# 25301 Rev: C Amendment/1 Issue Date: June 12, 2003 Refer to AMD’s Website (www.amd.com) for the latest information. Am29LV640MU 64 Megabit (4 M x 16-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES ■ Single power supply operation — 3 V for read, erase, and program operations ■ VersatileI/O control — Device generates data output voltages and tolerates data input voltages on the CE# and DQ inputs/outputs as determined by the voltage on the V IO pin; operates from 1.65 to 3.6 V ■ Manufactured on 0.23 µm MirrorBit process technology ■ SecSi (Secured Silicon) Sector region — 128-word sector for permanent, secure identification through an 8-word random Electronic Serial Number, accessible through a command sequence — May be programmed and locked at the factory or by the customer ■ Flexible sector architecture — One hundred twenty-eight 32 Kword sectors ■ Compatibility with JEDEC standards — Provides pinout and software compatibility for single-power supply flash, and superior inadvertent write protection ■ Minimum 100,000 erase cycle guarantee per sector ■ 20-year data retention at 125 °C PERFORMANCE CHARACTERISTICS ■ High performance — 90 ns access time — 25 ns page read times — 0.5 s typical sector erase time — 22 µs typical effective write buffer word programming time: 16-word write buffer reduces overall programming time for multiple-word/byte updates — 4-word page read buffer — 16-word write buffer ■ Low power consumption (typical values at 3.0 V, 5 MHz) — 30 mA typical active read current — 50 mA typical erase/program current — 1 µA typical standby mode current ■ Package options — 63-ball Fine-Pitch BGA — 64-ball Fortified BGA SOFTWARE & HARDWARE FEATURES ■ Software features — Program Suspend & Resume: read other sectors before programming operation is completed — Erase Suspend & Resume: read/program other sectors before an erase operation is completed — Data# polling & toggle bits provide status — Unlock Bypass Program command reduces overall multiple-word programming time — CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices ■ Hardware features — Sector Group Protection: hardware-level method of preventing write operations within a sector group — Temporary Sector Unprotect: VID-level method of changing code in locked sectors — ACC (high voltage) input accelerates programming time for higher throughput during system production — Hardware reset input (RESET#) resets device — Ready/Busy# output (RY/BY#) indicates program or erase cycle completion |
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