![]() |
전자부품 데이터시트 검색엔진 |
|
C122A1 데이터시트(HTML) 1 Page - Motorola, Inc |
|
C122A1 데이터시트(HTML) 1 Page - Motorola, Inc |
1 / 3 page ![]() 36 Motorola Thyristor Device Data Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . designed primarily for full-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled, solid-state devices are needed. • Glass Passivated Junctions and Center Gate Fire for Greater Parameter Uniformity and Stability • Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability • Blocking Voltage to 800 Volts • Different Leadform Configurations, Suffix (2) thru (6) available, see Leadform Options (Section 4) for Information MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Symbol Value Unit Repetitive Peak Off-State Voltage(1) (TJ = 25 to 100°C, Gate Open) Repetitive Peak Reverse Voltage C122F1 C122A1 C122B1 C122D1 C122M1 C122N1 VDRM VRRM 50 100 200 400 600 800 Volts Peak Non-repetitive Reverse Voltage(1) C122F1 C122A1 C122B1 C122D1 C122M1 C122N1 VRSM 75 200 300 500 700 800 Volts Forward Current RMS TC p 75°C (All Conduction Angles) IT(RMS) 8 Amps Peak Forward Surge Current (1/2 Cycle, Sine Wave, 60 Hz) ITSM 90 Amps Circuit Fusing Considerations (t = 8.3 ms) I2t 34 A2s 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, (cont.) positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. MOTOROLA SEMICONDUCTOR TECHNICAL DATA C122()1 Series CASE 221A-04 (TO-220AB) STYLE 3 SCRs 8 AMPERES RMS 50 thru 800 VOLTS K A G |