36

Motorola Thyristor Device Data

Silicon Controlled Rectifiers

Reverse Blocking Triode Thyristors

. . . designed primarily for full-wave ac control applications, such as motor controls,

heating controls and power supplies; or wherever half-wave silicon gate-controlled,

solid-state devices are needed.

• Glass Passivated Junctions and Center Gate Fire for Greater Parameter

Uniformity and Stability

• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat

Dissipation and Durability

• Blocking Voltage to 800 Volts

• Different Leadform Configurations,

Suffix (2) thru (6) available, see Leadform Options (Section 4) for Information

Rating

Symbol

Value

Unit

Repetitive Peak Off-State Voltage(1) (TJ = 25 to 100°C, Gate Open)

Repetitive Peak Reverse Voltage

C122F1

C122A1

C122B1

C122D1

C122M1

C122N1

VDRM

VRRM

50

100

200

400

600

800

Volts

Peak Non-repetitive Reverse Voltage(1)

C122F1

C122A1

C122B1

C122D1

C122M1

C122N1

VRSM

75

200

300

500

700

800

Volts

Forward Current RMS

TC p 75°C

(All Conduction Angles)

IT(RMS)

8

Amps

Peak Forward Surge Current

(1/2 Cycle, Sine Wave, 60 Hz)

ITSM

90

Amps

Circuit Fusing Considerations

(t = 8.3 ms)

I2t

34

A2s

1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however,

(cont.)

positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a

constant current source such that the voltage ratings of the devices are exceeded.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

C122()1

Series

CASE 221A-04

(TO-220AB)

STYLE 3

SCRs

8 AMPERES RMS

50 thru 800 VOLTS

K

A

G