MTB012C04Q8 datasheet(7/12 Pages) CYSTEKEC

부품명	MTB012C04Q8

상세설명	N- and P-Channel Enhancement Mode MOSFET

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제조업체	CYSTEKEC [Cystech Electonics Corp.]

홈페이지	http://www.cystekec.com

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7 / 12 page

CYStech Electronics Corp.

Spec. No. : C049Q8

Issued Date : 2017.04.24

Revised Date :

Page No. : 7/12

MTB012C04Q8

CYStek Product Specification

Typical Characteristics : Q2( P-channel)

Typical Output Characteristics

0

10

20

30

40

50

01

23

4

5

Brekdown Voltage vs Ambient Temperature

0.4

0.6

0.8

1

1.2

1.4

-75 -50 -25

0

25

50

75 100 125 150 175

Tj, Junction Temperature(°C)

-10V, -6V, -5.5V,-5V,-4.5V,-4V

-VDS, Drain-Source Voltage(V)

-3.5V

-3V

ID=-250μA,

V

VGS=-2.5V

=0V

GS

Static Drain-Source On-State resistance vs Drain Current

10

100

0.01

0.1

1

10

100

-ID, Drain Current(A)

VGS=-4.5V

-10V

Source Drain Current vs Source-Drain Voltage

0.2

0.4

0.6

0.8

1

1.2

024

68

10

-IS, Source Drain Current(A)

VGS=0V

Tj=25°C

Tj=150°C

Static Drain-Source On-State Resistance vs Gate-Source

Voltage

0

5

10

15

20

25

30

35

40

45

50

02468

1

-VGS, Gate-Source Voltage(V)

0

ID=-7A

ID=-5A

Drain-Source On-State Resistance vs Junction Tempearture

0

0.4

0.8

1.2

1.6

2

2.4

-75 -50 -25

0

25

50

75 100 125 150 175

Tj, Junction Temperature(°C)

VGS=-10V, ID=-7A

RDS(ON)@Tj=25°C : 15.4mΩ typ.

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MTB012C04Q8 데이터시트(PDF) 7 Page - Cystech Electonics Corp.

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