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LM25141-Q1 데이터시트(PDF) 5 Page - Texas Instruments

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부품명 LM25141-Q1
상세설명  Wide Input Range Synchronous Buck Controller
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제조업체  TI1 [Texas Instruments]
홈페이지  http://www.ti.com
Logo TI1 - Texas Instruments

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LM25141
www.ti.com
SNVSAU1 – MARCH 2017
Product Folder Links: LM25141
Submit Documentation Feedback
Copyright © 2017, Texas Instruments Incorporated
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±2000
V
Charged-device model (CDM), per JEDEC specification JESD22-
C101(2)
±500
(1)
Recommended Operating Conditions are conditions under which the device is intended to be functional. For specifications and test
conditions, see Electrical Characteristics.
(2)
High junction temperatures degrade operating lifetimes. Operating lifetime is de-rated for junction temperatures greater than 125°C.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
(1)
MIN
NOM
MAX
UNIT
VIN
Input voltage
VIN
3.8
42
V
SW to PGND
–0.3
42
V
HB to SW
–0.3
5
5.25
V
HO, HOL to SW
–0.3
HB + 0.3
V
LO, LOL to PGND
–0.3
5
5.25
V
FB, PG, OSC, SS, RES, DEMB,
VCCX
–0.3
5
V
EN to PGND
–0.3
42
V
VCC, VDD
–0.3
5
5.25
V
VOUT, CS
1.5
5
15
V
PGND to AGND
–0.3
0.3
V
Operating junction temperature(2)
–40
125
°C
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.4 Thermal Information
THERMAL METRIC(1)
LM5141
UNIT
RGE (QFN)
24 PINS
RθJA
Junction-to-ambient thermal resistance
34.1
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
36.8
°C/W
RθJB
Junction-to-board thermal resistance
12.1
°C/W
ψJT
Junction-to-top characterization parameter
0.5
°C/W
ψJB
Junction-to-board characterization parameter
12.2
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
2.9
°C/W


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