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STF4N90K5 데이터시트(PDF) 1 Page - STMicroelectronics |
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STF4N90K5 데이터시트(HTML) 1 Page - STMicroelectronics |
1 / 13 page November 2016 DocID029957 Rev 2 1/13 This is information on a product in full production. www.st.com STF4N90K5 N- channel 900 V, 1.90 Ω typ., 4 A MDmesh™ K5 Power MOSFET in a TO-220FP package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID STF4N90K5 900 V 2.10 Ω 4 A Industry’s lowest RDS(on) x area Industry’s best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected Applications Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Table 1: Device summary Order code Marking Package Packing STF4N90K5 4N90K5 TO-220FP Tube TO-220FP AM15572v1_no_tab D(2) G(1) S(3) |
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