STB13N60M2 datasheet(4/23 Pages) STMICROELECTRONICS

부품명	STB13N60M2

상세설명	Extremely low gate charge

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Electrical characteristics

STB13N60M2, STD13N60M2

4/23

DocID024569 Rev 4

2

Electrical characteristics

TC = 25 °C unless otherwise specified

Table 5: On/off-states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0 V, ID = 1 mA

600

V

IDSS

Zero-gate voltage drain

current

VGS = 0 V, VDS = 600 V

1

µA

VGS = 0 V, VDS = 600 V,

TC = 125 °C (1)

100

µA

IGSS

Gate-body leakage current

VDS = 0 V, VGS = ±25 V

±10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

2

3

4

V

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 5.5 A

0.35

0.38

Ω

Notes:

(1)Defined by design, not subject to production test.

Table 6: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS= 100 V, f = 1 MHz, VGS = 0 V

-

580

-

pF

Coss

Output

capacitance

-

32

-

pF

Crss

Reverse transfer

capacitance

-

1.1

-

pF

Coss eq.(1)

Equivalent output

capacitance

VDS = 0 to 480 V, VGS = 0 V

-

120

-

pF

RG

Intrinsic gate

resistance

f = 1 MHz, ID = 0 A

-

6.6

-

Ω

Qg

Total gate charge

VDD = 480 V, ID = 11 A, VGS = 10 V

(see Figure 17: "Test circuit for gate

charge behavior")

-

17

-

nC

Qgs

Gate-source

charge

-

2.5

-

nC

Qgd

Gate-drain charge

-

9

-

nC

Notes:

(1)Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS.

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