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1 / 23 page This is information on a product in full production. February 2015 DocID025105 Rev 3 1/23 STD4N80K5, STF4N80K5, STP4N80K5, STU4N80K5 N-channel 800 V, 2.1 Ω typ., 3 A MDmesh™ K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet - production data Figure 1. Internal schematic diagram Features • Industry’s lowest RDS(on) x area • Industry’s best figure of merit (FoM) • Ultra low gate charge • 100% avalanche tested • Zener-protected Applications • Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. TO-220 TO-220FP DPAK 1 3 TAB 1 2 3 1 2 3 TAB 3 2 1 TAB IPAK AM01476v1 Order code VDS RDS(on) max. ID PTOT STD4N80K5 800 V 2.5 Ω 3 A 60 W STF4N80K5 20 W STP4N80K5 60 W STU4N80K5 Table 1. Device summary Order code Marking Packages Packaging STD4N80K5 4N80K5 DPAK Tape and reel STF4N80K5 TO-220FP Tube STP4N80K5 TO-220 STU4N80K5 IPAK www.st.com |
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