STP4N80K5 datasheet(5/23 Pages) STMICROELECTRONICS

부품명	STP4N80K5

상세설명	N-channel 800 V, 2.1 ??typ., 3 A MDmesh??K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages

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제조업체	STMICROELECTRONICS [STMicroelectronics]

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5 / 23 page

DocID025105 Rev 3

5/23

STD4N80K5, STF4N80K5, STP4N80K5, STU4N80K5

Electrical characteristics

23

The built-in back-to-back Zener diodes have been specifically designed to enhance the ESD

capability of the device. The Zener voltage is appropriate for efficient and cost-effective

intervention to protect the device integrity. These integrated Zener diodes thus eliminate the

need for external components.

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

td(on)

Turn-on delay time

VDD = 400 V, ID = 1.5 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 18)

-

16.5

-

ns

tr

Rise time

-

15

-

ns

td(off)

Turn-off-delay time

-

36

-

ns

tf

Fall time

-

21

-

ns

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ. Max. Unit

ISD

Source-drain current

-

3

A

ISDM

(1)

1.

Pulse width limited by safe operating area

Source-drain current (pulsed)

12

A

VSD

(2)

2.

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 3 A, VGS = 0

-

1.5

V

trr

Reverse recovery time

ISD = 3 A, di/dt = 100 A/µs

VDD= 60 V

(see Figure 20)

-242

ns

Qrr

Reverse recovery charge

-

1.42

µC

IRRM

Reverse recovery current

-

12

A

trr

Reverse recovery time

ISD = 3 A, di/dt = 100 A/µs

VDD= 60 V TJ = 150 °C

(see Figure 20)

-373

ns

Qrr

Reverse recovery charge

-

1.98

µC

IRRM

Reverse recovery current

-

10.5

A

Table 8. Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

V(BR)GSO

Gate-source breakdown

voltage

IGS= ± 1 mA, ID=0

30

-

V

유사한 부품 번호 - STP4N80K5

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STMicroelectronics	STP4N100	202Kb / 10P	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
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	STP4N150	459Kb / 16P	N-channel 1500 V - 5 廓 - 4 A - PowerMESH??Power MOSFET TO-220 - TO-220FH - TO-247 - TO-3PF

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유사한 설명 - STP4N80K5

제조업체	부품명	데이터시트	상세설명
STMicroelectronics	STD2N105K5	1Mb / 21P	N-channel 1050 V, 6 廓 typ., 1.5 A MDmesh??K5 Power MOSFETs in DPAK, TO-220 and IPAK packages November 2014 Rev 3
	STD3NK80Z-1	1Mb / 29P	N-channel 800 V, 3.8 Ω typ., 2.5 A SuperMESH™ Power MOSFETs in IPAK, DPAK, TO-220FP, TO-220 packages Rev 7 April 2017
	STP3LN80K5	804Kb / 15P	N-channel 800 V, 2.75 Ω typ., 2 A MDmesh™ K5 Power MOSFET in TO-220 and IPAK packages June 2016
	STD11N65M5	1Mb / 25P	N-channel 650 V, 0.43 typ., 9 A MDmesh V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages
	STP7N105K5	989Kb / 18P	N-channel 1050 V, 1.4 廓 typ., 4 A MDmesh??K5 Power MOSFETs in TO-220, IPAK and TO-247 packages October 2016 Rev 2
	STD4N52K3	1Mb / 21P	N-channel 525 V, 2.5 A, 2.1 廓 typ., SuperMESH3??Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages
	STF4LN80K5	719Kb / 13P	N-channel 800 V, 2.1 Ω typ., 3 A MDmesh™ K5 Power MOSFET in a TO-220FP package May 2016
	STP9N80K5	795Kb / 16P	N-channel 800 V, 0.73 Ω typ., 7 A MDmesh™ K5 Power MOSFETs in a TO-220 and TO-247 packages July 2016
	STF11N65M5	1Mb / 25P	N-channel 650 V, 0.43 廓 typ., 9 A MDmesh??V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages December 2012 Rev 2
	STF14N80K5	766Kb / 16P	N-channel 800 V, 0.400 Ω typ., 12 A MDmesh™ K5 Power MOSFETs in TO-220FP and I²PAKFP packages December 2015

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