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STP4N80K5 데이터시트(PDF) 5 Page - STMicroelectronics |
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STP4N80K5 데이터시트(HTML) 5 Page - STMicroelectronics |
5 / 23 page DocID025105 Rev 3 5/23 STD4N80K5, STF4N80K5, STP4N80K5, STU4N80K5 Electrical characteristics 23 The built-in back-to-back Zener diodes have been specifically designed to enhance the ESD capability of the device. The Zener voltage is appropriate for efficient and cost-effective intervention to protect the device integrity. These integrated Zener diodes thus eliminate the need for external components. Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 400 V, ID = 1.5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 18) - 16.5 - ns tr Rise time - 15 - ns td(off) Turn-off-delay time - 36 - ns tf Fall time - 21 - ns Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 3 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) 12 A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 3 A, VGS = 0 - 1.5 V trr Reverse recovery time ISD = 3 A, di/dt = 100 A/µs VDD= 60 V (see Figure 20) -242 ns Qrr Reverse recovery charge - 1.42 µC IRRM Reverse recovery current - 12 A trr Reverse recovery time ISD = 3 A, di/dt = 100 A/µs VDD= 60 V TJ = 150 °C (see Figure 20) -373 ns Qrr Reverse recovery charge - 1.98 µC IRRM Reverse recovery current - 10.5 A Table 8. Gate-source Zener diode Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)GSO Gate-source breakdown voltage IGS= ± 1 mA, ID=0 30 - V |
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