STD7N60M2 datasheet(8/21 Pages) STMICROELECTRONICS

부품명	STD7N60M2

상세설명	Extremely low gate charge

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Electrical characteristics

STD7N60M2, STP7N60M2, STU7N60M2

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DocID024622 Rev 1

Figure 14. Drain-source diode forward

characteristics

Figure 15. Normalized VDS vs. temperature

VSD

0

2

ISD(A)

(V)

1

3

4

0

0.2

0.4

0.6

0.8

TJ=-50°C

TJ=150°C

TJ=25°C

5

1

1.2

1.4

AM15822v1

VDS

-50 -25

TJ(°C)

(norm)

50

100

0.93

0.95

0.97

0.99

1.01

ID = 1mA

0

25

75

1.03

1.05

1.07

1.09

1.11

AM15823v1

유사한 부품 번호 - STD7N60M2

제조업체	부품명	데이터시트	상세설명
STMicroelectronics	STD7N60M6	384Kb / 15P	N-channel 600 V, 780 mΩ typ., 5 A, MDmesh M6 Power MOSFET in a DPAK package Rev 2 - July 2020

More results

유사한 설명 - STD7N60M2

제조업체	부품명	데이터시트	상세설명
STMicroelectronics	STWA48N60M2	776Kb / 12P	Extremely low gate charge December 2015 Rev 1
	STL7N60M2	310Kb / 13P	Extremely low gate charge January 2015 Rev 1
	STB28N60M2	1Mb / 21P	Extremely low gate charge
	STD11N65M2	1Mb / 21P	Extremely low gate charge May 2014 Rev 1
	STF5N60M2	743Kb / 13P	Extremely low gate charge June 2016 Rev 2
	STF7N65M2	904Kb / 13P	Extremely low gate charge August 2014 Rev 2
	STL13N65M2	642Kb / 16P	Extremely low gate charge December 2014 Rev 1
	STL19N60M2	770Kb / 15P	Extremely low gate charge January 2016 Rev 1
	STW56N65M2	730Kb / 12P	Extremely low gate charge December 2014 Rev 1
	STB24N65M2	1Mb / 20P	Extremely low gate charge

More results

STD7N60M2 데이터시트(PDF) 8 Page - STMicroelectronics

STD7N60M2 데이터시트(HTML) 8 Page - STMicroelectronics

유사한 부품 번호 - STD7N60M2

유사한 설명 - STD7N60M2

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