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3 / 21 page DocID024622 Rev 1 3/21 STD7N60M2, STP7N60M2, STU7N60M2 Electrical ratings 21 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VGS Gate-source voltage ± 25 V ID Drain current (continuous) at TC = 25 °C 5 A ID Drain current (continuous) at TC = 100 °C 3.5 A IDM (1) Drain current (pulsed) 20 A PTOT Total dissipation at TC = 25 °C 60 W dv/dt (1) 1. ISD ≤ 5 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD=400 V Peak diode recovery voltage slope 15 V/ns dv/dt(2) 2. VDS ≤ 480 V MOSFET dv/dt ruggedness 50 Tstg Storage temperature - 55 to 150 °C Tj Max. operating junction temperature Table 3. Thermal data Symbol Parameter Value Unit DPAK TO-220 IPAK Rthj-case Thermal resistance junction-case max 2.08 2.08 °C/W Rthj-pcb Thermal resistance junction-pcb max(1) 1. When mounted on 1 inch² FR-4, 2 Oz copper board 50 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 100 °C/W Table 4. Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax ) 1.5 A EAS Single pulse avalanche energy (starting Tj=25°C, ID= IAR; VDD=50) 99 mJ |
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