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STP11N65M2 데이터시트(PDF) 1 Page - STMicroelectronics |
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STP11N65M2 데이터시트(HTML) 1 Page - STMicroelectronics |
1 / 21 page This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. May 2014 DocID026376 Rev 1 1/21 STD11N65M2, STP11N65M2, STU11N65M2 N-channel 650 V, 0.6 Ω typ., 7 A MDmesh II Plus™ low Q g Power MOSFETs in DPAK, TO-220 and IPAK packages Datasheet - preliminary data Figure 1. Internal schematic diagram Features • Extremely low gate charge • Lower R DS(on) x area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected Applications • Switching applications Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters. AM01476v1 DPAK IPAK TO-220 1 3 TAB 1 2 3 TAB 3 2 1 TAB Order codes VDS RDS(on) max ID STD11N65M2 650 V 0.67 Ω 7 A STP11N65M2 STU11N65M2 Table 1. Device summary Order codes Marking Package Packaging STD11N65M2 11N65M2 DPAK Tape and reel STP11N65M2 TO-220 Tube STU11N65M2 IPAK www.st.com |
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