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STD15N60M2-EP 데이터시트(PDF) 5 Page - STMicroelectronics |
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STD15N60M2-EP 데이터시트(HTML) 5 Page - STMicroelectronics |
5 / 15 page STD15N60M2-EP Electrical characteristics DocID027308 Rev 1 5/15 Table 8: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 300 V, ID = 5.5 A RG = 4.7 Ω, VGS = 10 V (see Figure 14: "Switching times test circuit for resistive load" and Figure 19: "Switching time waveform") - 11 - ns tr Rise time - 10 - ns td(off) Turn-off- delay time - 40 - ns tf Fall time - 15 - ns Table 9: Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 11 A ISDM(1) Source-drain current (pulsed) - 44 A VSD (2) Forward on voltage VGS = 0 V, ISD = 11 A - 1.6 V trr Reverse recovery time ISD = 11 A, di/dt = 100 A/µs, VDD = 60 V (see Figure 16: " Test circuit for inductive load switching and diode recovery times") - 280 ns Qrr Reverse recovery charge - 2.7 µC IRRM Reverse recovery current - 19.5 A trr Reverse recovery time ISD = 11 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C (see Figure 16: " Test circuit for inductive load switching and diode recovery times") - 400 ns Qrr Reverse recovery charge - 3.8 µC IRRM Reverse recovery current - 19 A Notes: (1)Pulse width is limited by safe operating area (2)Pulsed: pulse duration = 300 µs, duty cycle 1.5% |
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