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STD52P3LLH6 데이터시트(PDF) 4 Page - STMicroelectronics |
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4 / 16 page Electrical characteristics STD52P3LLH6 4/16 DocID025835 Rev 2 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4: Static Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 250 µA, VGS = 0 30 V IDSS Zero gate voltage drain current VGS = 0, VDS = 30 V VGS = 0, VDS = 30 V, Tc = 125 °C 1 µA 10 µA IGSS Gate body leakage current VGS = ± 20 V, VDS = 0 ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 1 2.5 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 26 A 0.01 0.012 Ω VGS = 4.5 V, ID = 26 A 0.014 0.017 Ω Table 5: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS = 25 V, f = 1 MHz, VGS = 0 - 3350 - pF Coss Output capacitance - 414 - pF Crss Reverse transfer capacitance - 287 - pF Qg Total gate charge VDD = 15 V, ID = 52 A VGS = 4.5 V (see Figure 14: "Gate charge test circuit" ) - 33 - nC Qgs Gate-source charge - 14 - nC Qgd Gate-drain charge - 11 - nC Rg Gate input resistance ID = 0 Gate bias = 0 Test signal level = 20 mV f = 1MHz - 1.5 Ω For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed. |
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