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STPLED524 데이터시트(PDF) 5 Page - STMicroelectronics

부품명 STPLED524
상세설명  Very low intrinsic capacitance
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DocID025164 Rev 1
5/22
STDLED524,STFILED524,STPLED524,STULED524
Electrical characteristics
The built-in back-to-back Zener diodes have been specifically designed to enhance not only
the device’s ESD capability, but also to make them capable of safely absorbing any voltage
transients that may occasionally be applied from gate to source. In this respect, the Zener
voltage is appropriate to achieve efficient and cost-effective protection of the device’s
integrity. The integrated Zener diodes thus eliminate the need for external components.
Table 7. Source-drain diode
Symbol
Parameter
Test conditions
Min.
Typ. Max. Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current
Source-drain current (pulsed)
-
2.5
10
A
A
VSD
(2)
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
Forward on voltage
ISD = 2.5 A, VGS = 0
-
1.6
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 2.5 A, di/dt = 100 A/µs
VDD= 60 V
(see Figure 20)
-
173
778
9
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 2.5 A, di/dt = 100 A/µs
VDD= 60 V TJ = 150 °C
(see Figure 20)
-
196
941
10
ns
µC
A
Table 8. Gate-source Zener diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
BVGSO
Gate-source breakdown
voltage
IGS= ± 1 mA, ID = 0
30
-
-
V
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