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1 / 15 page This is information on a product in full production. September 2016 DocID024664 Rev 4 1/15 STF6N80K5, STFI6N80K5 N-channel 800 V, 1.3 Ω typ., 4.5 A MDmesh™ K5 Power MOSFETs in TO-220FP and I²PAKFP packages Datasheet - production data Figure 1. Internal schematic diagram Features • Industry’s lowest RDS(on) • Industry’s best figure of merit (FoM) • Ultra low gate charge • 100% avalanche tested • Zener-protected Applications • Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. D(2) G(1) S(3) AM01476v1 TO-220FP 1 2 3 1 2 3 I PAKFP 2 Order code VDS RDS(on)max ID PTOT STF6N80K5 800 V 1.6 Ω 4.5 A 25 W STFI6N80K5 Table 1. Device summary Order code Marking Package Packing STF6N80K5 6N80K5 TO-220FP Tube STFI6N80K5 I2PAKFP www.st.com |
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