STP100NF04 datasheet(5/20 Pages) STMICROELECTRONICS

부품명	STP100NF04

상세설명	AEC-Q101 qualified

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제조업체	STMICROELECTRONICS [STMicroelectronics]

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STB100NF04T4, STP100NF04

Electrical characteristics

DocID9969 Rev 7

5/20

Table 6: Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

-

120

A

ISDM(1)

Source-drain current (pulsed)

-

480

A

VSD(2)

Forward on voltage

ISD = 120 A, VGS = 0 V

-

1.3

V

tr

Reverse recovery time

ISD = 120 A, VDD = 20 V,

di/dt = 100 A/

μs V, Tj =

150 °C

(see Figure 22: "Test

circuit for inductive load

switching and diode

recovery times")

-

75

-

ns

td(off)

Reverse recovery charge

-

185

-

nC

tf

Reverse recovery current

-

5

-

A

Notes:

(1)Pulse width limited by safe operating area.

(2)Pulsed: Pulse duration = 300 μs, duty cycle 1.5%

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STMicroelectronics	STP100NF04	584Kb / 15P	N-CHANNEL 40V - 0.0043ohm - 120A TO-220/D2PAK/I2PAK STripFET??II POWER MOSFET
STMicroelectronics	STP100NF04	394Kb / 17P	N-channel 40V - 0.0043ohm - 120A - TO-220 - D2PAK STripFET TM II Power MOSFET
VBsemi Electronics Co.,...	STP100NF04	970Kb / 7P	N-Channel 40-V (D-S) MOSFET
STMicroelectronics	STP100NF04L	268Kb / 8P	N-CHANNEL 40V - 0.0036 ohm - 100A TO-220 STripFET??II POWER MOSFET

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