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STFH10N60M2 데이터시트(PDF) 1 Page - STMicroelectronics |
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1 / 12 page August 2016 DocID029418 Rev 3 1/12 This is information on a product in full production. www.st.com STFH10N60M2 N- channel 600 V, 0.55 Ω typ., 7.5 A MDmesh™ M2 Power MOSFET in a TO-220FP wide creepage package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS @ TJmax RDS(on) max ID STFH10N60M2 650 V 0.60 Ω 7.5 A Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protected Wide creepage distance of 4.25 mm between the pins Applications Switching applications LLC converters, resonant converters Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. The TO-220FP wide creepage package provides increased surface insulation for Power MOSFETs to prevent failure due to arcing, which can occur in polluted environments. Table 1: Device summary Order code Marking Package Packing STFH10N60M2 10N60M2 TO-220FP wide creepage Tube AM15572v1_no_tab D(2) G(1) S(3) |
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