STFI20NK50Z datasheet(5/13 Pages) STMICROELECTRONICS

부품명	STFI20NK50Z

상세설명	N-channel 500 V, 0.23 廓, 17 A Zener-protected SuperMESH?? Power MOSFET in I짼PAKFP package

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5 / 13 page

STFI20NK50Z

Electrical characteristics

Doc ID 019007 Rev 3

5/13

The built-in back-to-back Zener diodes have specifically been designed to enhance not only

the device’s ESD capability, but also to make them safely absorb possible voltage transients

that may occasionally be applied from gate to source. In this respect the Zener voltage is

appropriate to achieve an efficient and cost-effective intervention to protect the device’s

integrity. These integrated Zener diodes thus avoid the usage of external components.

Table 7.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

ISDM

(1)

1.

Pulsed: pulse duration=300µs, duty cycle 1.5%

Source-drain current

Source-drain current (pulsed)

-

17

68

A

VSD

(2)

2.

Pulse width limited by safe operating area.

Forward on voltage

ISD = 17 A, VGS = 0

-

1.6

V

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 17 A,

di/dt = 100 A/µs

VR = 100 V

(see Figure 17)

-

355

3.90

22

ns

µC

A

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 17 A,

di/dt = 100 A/µs

VR = 100 V, Tj = 150 °C

(see Figure 17)

-

440

5.72

26

ns

µC

A

Table 8.

Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)GSO

Gate-source breakdown voltage

(ID = 0)

IGS= ± 1mA

30

-

V

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