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STGB40V60F 데이터시트(PDF) 4 Page - STMicroelectronics

부품명 STGB40V60F
상세설명  Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
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제조업체  STMICROELECTRONICS [STMicroelectronics]
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Electrical characteristics
STGB40V60F, STGFW40V60F, STGP40V60F, STGW40V60F
4/24
DocID024700 Rev 2
2
Electrical characteristics
TJ = 25 °C unless otherwise specified.
Table 4. Static characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)CES
Collector-emitter
breakdown voltage
(VGE = 0)
IC = 2 mA
600
V
VCE(sat)
Collector-emitter saturation
voltage
VGE = 15 V, IC = 40 A
1.8
2.3
V
VGE = 15 V, IC = 40 A
TJ = 125 °C
2.15
VGE = 15 V, IC = 40 A
TJ = 175 °C
2.35
VGE(th)
Gate threshold voltage
VCE = VGE, IC = 1 mA
5
6
7
V
ICES
Collector cut-off current
(VGE = 0)
VCE = 600 V
25
µA
IGES
Gate-emitter leakage
current (VCE = 0)
VGE = ± 20 V
250
nA
Table 5. Dynamic characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Cies
Input capacitance
VCE = 25 V, f = 1 MHz,
VGE = 0
-5400
-
pF
Coes
Output capacitance
-
220
-
pF
Cres
Reverse transfer
capacitance
-180
-
pF
Qg
Total gate charge
VCC = 480 V, IC = 40 A,
VGE = 15 V, see Figure 28
-226
-
nC
Qge
Gate-emitter charge
-
38
-
nC
Qgc
Gate-collector charge
-
95
-
nC


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