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STGW60H65FB 데이터시트(PDF) 5 Page - STMicroelectronics |
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STGW60H65FB 데이터시트(HTML) 5 Page - STMicroelectronics |
5 / 16 page DocID025187 Rev 4 5/16 STGW60H65FB, STGWT60H65FB Electrical characteristics Table 6. Switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VCE = 400 V, IC = 60 A, RG = 10 Ω, VGE = 15 V, see Figure 22 -66 ns tr Current rise time - 38 - ns (di/dt)on Turn-on current slope - 1216 A/µs td(off) Turn-off delay time 210 ns tf Current fall time - 20 - ns Eon (1) 1. Energy loss includes reverse recovery of the external diode. The diode is the same as the co-packaged STGW60H65DFB. Turn-on switching loss - 1590 - µJ Eoff (2) 2. Turn-off loss also includes the tail of the collector current. Turn-off switching loss - 900 - µJ Ets Total switching loss - 2490 - µJ td(on) Turn-on delay time VCE = 400 V, IC = 60 A, RG = 10 Ω, VGE = 15 V, TJ = 175 °C, see Figure 22 -59 ns tr Current rise time - 40 - ns (di/dt)on Turn-on current slope - 1230 A/µs td(off) Turn-off delay time 242 ns tf Current fall time - 147 - ns Eon (1) Turn-on switching loss - 2860 - µJ Eoff (2) Turn-off switching loss - 1255 - µJ Ets Total switching loss - 4115 - µJ |
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