STGW80H65DFB-4 datasheet(7/16 Pages) STMICROELECTRONICS

부품명	STGW80H65DFB-4

상세설명	Tight parameter distribution

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STGW80H65DFB-4

Electrical characteristics

DocID028076 Rev 3

7/16

2.1

Electrical characteristics (curves)

Figure 2: Power dissipation vs. case temperature

Figure 3: Collector current vs. case temperature

Figure 4: Output characteristics (TJ = 25 °C)

Figure 5: Output characteristics (TJ = 175 °C)

Figure 6: VCE(sat) vs. junction temperature

Figure 7: VCE(sat) vs. collector current

100

0

TC(°C)

P

TOT

(W)

100

200

50

300

150

400

GIPD160920130948FSR

V

GE = 15 V, TJ = 175 °C

IC

60

40

20

0

25

TC(°C)

(A)

100

80

50

75

100

120

125 150

VGE = 15 V, TJ = 175 °C

GIPD160920130941FSR

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STGW80H65DFB-4 데이터시트(PDF) 7 Page - STMicroelectronics

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