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STP7N65M2 데이터시트(PDF) 5 Page - STMicroelectronics |
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STP7N65M2 데이터시트(HTML) 5 Page - STMicroelectronics |
5 / 18 page STP7N65M2, STU7N65M2 Electrical characteristics DocID026788 Rev 3 5/18 Table 8: Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 5 A ISDM (1) Source-drain current (pulsed) - 20 A VSD (2) Forward on voltage ISD = 5 A, VGS = 0 - 1.6 V trr Reverse recovery time ISD = 5 A, di/dt = 100 A/µs VDD = 60 V (see Figure 21: "Switching time waveform") - 275 ns Qrr Reverse recovery charge - 1.62 µC IRRM Reverse recovery current - 11.8 A trr Reverse recovery time ISD = 5 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 21: "Switching time waveform") - 430 ns Qrr Reverse recovery charge - 2.54 µC IRRM Reverse recovery current - 11.9 A Notes: (1) Pulse width limited by safe operating area. (2) Pulsed: pulse duration = 300 µs, duty cycle 1.5% |
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