STP7N65M2 datasheet(5/18 Pages) STMICROELECTRONICS

부품명	STP7N65M2

상세설명	N-channel 650 V, 0.98 廓 typ., 5 A MDmesh??M2 Power MOSFETs in TO-220 and IPAK packages

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STP7N65M2, STU7N65M2

Electrical characteristics

DocID026788 Rev 3

5/18

Table 8: Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

-

5

A

ISDM

(1)

Source-drain current

(pulsed)

-

20

A

VSD

(2)

Forward on voltage

ISD = 5 A, VGS = 0

-

1.6

V

trr

Reverse recovery

time

ISD = 5 A, di/dt = 100 A/µs

VDD = 60 V (see Figure 21:

"Switching time waveform")

-

275

ns

Qrr

Reverse recovery

charge

-

1.62

µC

IRRM

Reverse recovery

current

-

11.8

A

trr

Reverse recovery

time

ISD = 5 A, di/dt = 100 A/µs

VDD = 60 V, Tj = 150 °C

(see Figure 21: "Switching time

waveform")

-

430

ns

Qrr

Reverse recovery

charge

-

2.54

µC

IRRM

Reverse recovery

current

-

11.9

A

Notes:

(1)

Pulse width limited by safe operating area.

(2)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

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