STP90N6F6 datasheet(4/13 Pages) STMICROELECTRONICS

부품명	STP90N6F6

상세설명	N-channel 60 V, 0.0057 廓 typ., 90 A STripFET??F6 Power MOSFET in a TO-220 package

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Electrical characteristics

STP90N6F6

4/13

DocID025190 Rev 3

2

Electrical characteristics

(TC = 25 °C unless otherwise specified).

Table 5: Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

VGS = 0 V, ID = 250 µA

60

V

IDSS

Zero gate voltage drain

current

VGS = 0 V, VDS = 60 V

10

µA

VGS = 0 V, VDS = 60 V,

Tj = 125 °C

100

µA

IGSS

Gate-body leakage

current

VDS = 0 V, VGS = ±20 V

±100

nA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

2

4

V

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID= 45 A

0.0057

0.0063

Ω

Table 6: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0 V

-

4295

-

pF

Coss

Output capacitance

-

292

-

pF

Crss

Reverse transfer

capacitance

-

190

-

pF

Qg

Total gate charge

VDD = 30 V, ID = 90 A,

VGS = 10 V (see Figure 14:

"Gate charge test circuit")

-

74.9

-

nC

Qgs

Gate-source charge

-

19

-

nC

Qgd

Gate-drain charge

-

18.3

-

nC

Rg

Intrinsic gate

resistance

f = 1 MHz open drain

-

2.2

-

Ω

Table 7: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 30 V, ID = 45 A

RG = 4.7

Ω, VGS = 10 V (see

Figure 13: "Switching times

test circuit for resistive load"

and Figure 18: "Switching time

waveform")

-

22

-

ns

tr

Rise time

-

42

-

ns

td(off)

Turn-off-delay time

-

73

-

ns

tf

Fall time

-

16

-

ns

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