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STP100N6F7 데이터시트(PDF) 5 Page - STMicroelectronics |
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STP100N6F7 데이터시트(HTML) 5 Page - STMicroelectronics |
5 / 13 page DocID027212 Rev 2 5/13 STP100N6F7 Electrical characteristics 13 Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit VSD (1) 1. Pulse test: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage VGS = 0 V, ISD = 100A - 1.2 V trr Reverse recovery time ISD = 100 A, di/dt = 100 A/µs, VDD = 48 V - 48.4 ns Qrr Reverse recovery charge - 47 nC IRRM Reverse recovery current - 2.0 A |
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