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STX6NM60N 데이터시트(PDF) 4 Page - STMicroelectronics

부품명 STX6NM60N
상세설명  N-channel 600 V, 0.85 ?? 4.6 A MDmesh??II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK
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제조업체  STMICROELECTRONICS [STMicroelectronics]
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Electrical characteristics
STx6NM60N
4/19
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 5.
On/off states
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 1 mA, VGS= 0
600
V
dv/dt(1)
1.
Characteristics value at turn off on inductive load
Drain-source voltage slope
VDD= 400 V, VGS = 10 V,
ID = 4.6 A
40
V/ns
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating @125 °C
1
100
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20 V
±
100
nA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250 µA
2
3
4
V
RDS(on)
Static drain-source on
resistance
VGS= 10 V, ID= 2.3 A
0.85
0.92
Table 6.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance
VDS =15 V, ID = 2.3 A
4
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f=1 MHz,
VGS=0
420
30
4
pF
pF
pF
Coss eq.
(2)
2.
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Output equivalent
capacitance
VGS =0 , VDS =0 to 480 V
70
pF
Rg
Gate input resistance
f=1 MHz Gate DC Bias=0
test signal level=20 mV
open drain
6
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=480 V, ID = 4.6 A
VGS =10 V
Figure 19
13
2
7
nC
nC
nC
Obsolete
Product(s)
- Obsolete
Product(s)


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