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TPDVXX40 데이터시트(PDF) 3 Page - STMicroelectronics

부품명 TPDVXX40
상세설명  40 A high voltage Triacs
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TPDVXX40 데이터시트(HTML) 3 Page - STMicroelectronics

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TPDVxx40
Characteristics
8
Table 4. Gate characteristics (maximum values)
Symbol
Parameter
Value
Unit
PG(AV)
Average gate power dissipation
1
W
PGM
Peak gate power dissipation
tp = 20 µs
40
W
IGM
Peak gate current
tp = 20 µs
8
A
VGM
Peak positive gate voltage
tp = 20 µs
16
V
Table 5. Thermal resistance
Symbol
Parameter
Value
Unit
Rth(j-a)
Junction to ambient
50
°C/W
Rth(j-c) DC
Junction to case for DC
1.2
°C/W
Rth(j-c) AC
Junction to case for 360 °conduction angle (F = 50 Hz)
0.9
°C/W
Figure 1. Max. rms power dissipation versus
on-state rms current (F = 50 Hz)
(curves limited by (dI/dt)c)
Figure 2. Max. rms power dissipation and max.
allowable temperatures (Tamb and Tcase) for
various Rth
Figure 3. On-state rms current versus case
temperature
Figure 4. Relative variation of thermal
impedance versus pulse duration


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