TS110-7 datasheet(4/10 Pages) STMICROELECTRONICS

부품명	TS110-7

상세설명	High surge voltage 1.25 A SCR for circuit breaker

Download	10 Pages

Scroll/Zoom	100%

제조업체	STMICROELECTRONICS [STMicroelectronics]

홈페이지	http://www.st.com

Logo

4 / 10 page

Characteristics

TS110-7

4/10

DocID022271 Rev 4

Figure 5. Relative variation of thermal

impedance junction to ambient versus pulse

duration

Figure 6. Relative variation of gate triggering

current and voltage, holding and latching

current versus Tj

K=[Z

/R

]

th(j-a)

0.01

0.10

1.00

1.0E-03

1.0E-02

1.0E-01

1.0E+00

1.0E+01

1.0E+02

1.0E+03

TO-92

SMBflat-3L

Copper surface

area = 5cm²

t (s)

p

I, I , I

[T ] /

GT

H

L

j

, V

I

, I , I , V

[T =25°C]

GT

H

L

GT

j

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

3.0

-40

-20

0

20

40

60

80

100

120

VGT

IGT

IH & I L

T (°C)

j

Figure 7. Relative variation of holding current

versus gate-cathode resistance (typical values)

Figure 8. Relative variation of dV/dt immunity

versus gate-cathode resistance (typical values)

I [R

] / I [

= 220

]

HGK

H

Ω

RGK

0.0

0.5

1.0

1.5

0.1

1.0

10.0

R(k )

GK

Ω

dV/dt[R

] / dV/dt[R

= 220 ]

GK

W

0.01

0.10

1.00

10.00

0

200

400

600

800

R( )

GK W

T = 125°C

j

V = 0.67 x V

D

DRM

Figure 9. Relative variation of dV/dt immunity

versus gate-cathode capacitance (typical

values)

Figure 10. Relative variation of dV/dt immunity

versus junction temperature with RGK = 220 Ω

(typical values)

dV/dt[C

] / dV/dt[C

= 100 nF]

GK

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

0

20

40

60

80

100

120

140

160

180

200

220

C

(nF)

GK

Tj = 125°C

V = 0.67 x V

D

DRM

Typical value of dV/dt

= 25 V/µs

[CGK = 100 nF]

dV/dt[ ] / dV/dt[

=

]

Tj

125 °C

0

1

2

3

4

5

6

7

8

9

10

20

40

60

80

100

120

T (°C)

j

RGK = 220

V = 0.67 x V

Ω

D

DRM

유사한 부품 번호 - TS110-7

제조업체	부품명	데이터시트	상세설명
STMicroelectronics	TS110-8	228Kb / 10P	High surge voltage 1.25 A SCR for circuit breaker October 2014 Rev 1

More results

유사한 설명 - TS110-7

제조업체	부품명	데이터시트	상세설명
STMicroelectronics	TS110-8	228Kb / 10P	High surge voltage 1.25 A SCR for circuit breaker October 2014 Rev 1
STMicroelectronics	X02	136Kb / 11P	1.25 A sensitive gate SCR
Panasonic Semiconductor	DZ2J043M0L	334Kb / 5P	For constant voltage / For surge absorption circuit
Panasonic Semiconductor	MAZ9062H	85Kb / 3P	For surge absorption circuit
Vishay Siliconix	VS-40TPSPBF	201Kb / 8P	Thyristor High Voltage, Phase Control SCR, 40 A Revision: 14-Sep-17
	VS-25TTS08FP-M3	172Kb / 7P	Thyristor High Voltage, Phase Control SCR, 25 A 01-Jan-2022
	VS-25TTS12HM3	180Kb / 7P	Thyristor High Voltage, Phase Control SCR, 25 A 01-Jan-2022
	VS-40TPS16-M3	181Kb / 7P	Thyristor High Voltage, Phase Control SCR, 40 A 01-Jan-2022
	VS-30TPS12L-M3	181Kb / 7P	Thyristor High Voltage, Phase Control SCR, 30 A Revision: 31-Jul-2018
	VS-10TTS08PBF	191Kb / 7P	Thyristor High Voltage, Phase Control SCR, 10 A Revision: 23-Aug-11

More results

TS110-7 데이터시트(PDF) 4 Page - STMicroelectronics

TS110-7 데이터시트(HTML) 4 Page - STMicroelectronics

유사한 부품 번호 - TS110-7

유사한 설명 - TS110-7

Html Pages

1 2 3 4 5 6 7 8 9 10

데이터시트 다운로드

링크 URL