전자부품 데이터시트 검색엔진 |
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TS110-8 데이터시트(PDF) 5 Page - STMicroelectronics |
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TS110-8 데이터시트(HTML) 5 Page - STMicroelectronics |
5 / 10 page DocID026589 Rev 1 5/10 TS110-8 Characteristics 10 Figure 15. Non repetitive surge peak on-state current Figure 11. Relative variation of dV/dt immunity versus gate-cathode resistance (typical values) Figure 12. Relative variation of dV/dt immunity versus gate-cathode capacitor (typical values) 0.10 1.00 10.00 100 200 300 400 500 600 700 RGK () Ω dV/d R dV/d R 220 t GK t GK [] /[ = ] Ω VV D = 0.67 X DRM j = 125 °C T 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.0 0.5 1.0 1.5 2.0 CGK () nF dV/d C dV/d C 100 t GK t GK [] /[ = ] pF VV D = 0.67 X DRM j = 125 °C T R 220 GK = Ω Figure 13. On-state characteristics (maximum values) Figure 14. Surge peak on-state current versus number of cycles 0.1 1.0 10.0 100.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Tj = 125 °C Tj = 25 °C VTM () V ITM () A j = 125 °C T = 0 Vto .95 V Rd 220 m = Ω |
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유사한 설명 - TS110-8 |
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