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STD200GK14 데이터시트(PDF) 3 Page - Sirectifier Semiconductors |
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STD200GK14 데이터시트(HTML) 3 Page - Sirectifier Semiconductors |
3 / 4 page Thyristor-Diode Modules Fig. 2a Maximum forward current at case temperature Fig. 3 Power dissipation versus on-state current and ambient temperature (per thyristor or diode) Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature Fig. 1 Surge overload current I TSM, IFSM: Crest value, t: duration Fig. 4 Gate trigger characteristics Fig. 6 Gate trigger delay time Fig. 2 i2t versus time (1-10 ms) 3 x STD/SDT200 STD200GKXX P3 ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com |
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