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MV1807J1 데이터시트(PDF) 1 Page - Advanced Semiconductor |
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MV1807J1 데이터시트(HTML) 1 Page - Advanced Semiconductor |
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1 / 1 page A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice. CHARACTERISTICS TC = 25 OC NONE SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS VB IR = 10 µA 80 V CT VR = 6.0 V f = 1.0 MHz 10.8 13.2 pF RS VR = 6.0 V f = 50 MHz 0.25 Ohms FOUT 1000 MHz POUT 25.1 W FIN 500 MHz PIN 37.0 W SILICON VARACTOR DIODE MV1807J1 DESCRIPTION: The ASI MV1807J1 is a Diffused Epitaxial Varactor Diode Designed for Multiplier Applications. MAXIMUM RATINGS I 100 mA V 80 V PDISS 21 W @ TC = 25 OC TJ -65 OC to +150 OC TSTG -65 OC to +175 OC θθθθ JC 6.0 OC/W PACKAGE STYLE DO-4 Cathode to case |
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