NTD110N02R datasheet(2/8 Pages) ONSEMI

부품명	NTD110N02R

부품 상세설명	Power MOSFET

Download	8 Pages

Scroll/Zoom	100%

제조업체	ONSEMI [ON Semiconductor]

홈페이지	http://www.onsemi.com

Logo

2 / 8 page

NTD110N02R

http://onsemi.com

2

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage (Note 3)

(VGS = 0 V, ID = 250 mA)

Positive Temperature Coefficient

V(BR)DSS

24

28

15

V

mV/

°C

Zero Gate Voltage Drain Current

(VDS = 20 V, VGS = 0 V)

(VDS = 20 V, VGS = 0 V, TJ = 125°C)

IDSS

1.5

10

mA

Gate−Body Leakage Current (VGS = ±20 V, VDS = 0 V)

IGSS

±100

nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage (Note 3)

(VDS = VGS, ID = 250 mA)

Negative Threshold Temperature Coefficient

VGS(th)

1.0

1.5

5.0

2.0

V

mV/

°C

Static Drain−to−Source On−Resistance (Note 3)

(VGS = 10 V, ID = 110 A)

(VGS = 4.5 V, ID = 55 A)

(VGS = 10 V, ID = 20 A)

(VGS = 4.5 V, ID = 20 A)

RDS(on)

4.1

5.5

3.9

5.5

4.6

6.2

m

W

Forward Transconductance (VDS = 10 V, ID = 15 A) (Note 3)

gFS

44

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(V

20 V V

0V

Ciss

2710

3440

pF

Output Capacitance

(VDS = 20 V, VGS = 0 V,

f = 1.0 MHz)

Coss

1105

1670

Transfer Capacitance

f = 1.0 MHz)

Crss

450

640

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

td(on)

11

22

ns

Rise Time

(VGS = 10 V, VDD = 10 V,

tr

39

80

Turn−Off Delay Time

(VGS

10 V, VDD

10 V,

ID = 40 A, RG = 3.0 W)

td(off)

27

40

Fall Time

tf

21

40

Gate Charge

(V

45V I

40 A

QT

23.6

28

nC

(VGS = 4.5 V, ID = 40 A,

VDS = 10 V) (Note 3)

QGS

5.1

VDS = 10 V) (Note 3)

QDS

11

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage

(IS = 20 A, VGS = 0 V) (Note 3)

VSD

0.82

1.2

V

Forward On−Voltage

(IS = 20 A, VGS = 0 V) (Note 3)

(IS = 55 A, VGS = 0 V)

VSD

0.82

0.99

1.2

V

(IS

55 A, VGS

0 V)

(IS = 20 A, VGS = 0 V, TJ = 125°C)

0.99

0.65

Reverse Recovery Time

(I

30 A V

0V

trr

36.5

ns

(IS = 30 A, VGS = 0 V,

dIS/dt = 100 A/ms) (Note 3)

ta

30

dIS/dt = 100 A/ms) (Note 3)

tb

25

Reverse Recovery Stored Charge

Qrr

0.048

mC

3. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperatures.

유사한 부품 번호 - NTD110N02R

제조업체	부품명	데이터시트	부품 상세설명
ON Semiconductor	NTD110N02R	102Kb / 6P	Power MOSFET September, 2014 ??Rev. 11
	NTD110N02RT4G	102Kb / 6P	Power MOSFET September, 2014 ??Rev. 11
	NTD110N02R	102Kb / 6P	Power MOSFET September, 2014 ??Rev. 11

More results

유사한 설명 - NTD110N02R

제조업체	부품명	데이터시트	부품 상세설명
ON Semiconductor	NTMS4937N	142Kb / 5P	Power MOSFET Power MOSFET September, 2009 ??Rev. 0
ON Semiconductor	NTP35N15G	161Kb / 7P	Power MOSFET Power MOSFET May, 2010 ??Rev. 4
International Rectifier	IRLBA1304	104Kb / 8P	Power MOSFET
	IRLIZ14G	171Kb / 6P	POWER MOSFET
	IRLIZ44N	105Kb / 8P	Power MOSFET
ON Semiconductor	NTP75N06	79Kb / 8P	Power MOSFET August, 2004 ??Rev. 2
International Rectifier	IRLI520N	37Kb / 2P	Power MOSFET
List of Unclassifed Man...	CMT05N50	192Kb / 5P	Power MOSFET
Fuji Electric	2SK3523-01R	356Kb / 19P	POWER MOSFET
International Rectifier	IRFR3410	140Kb / 10P	Power MOSFET

More results

NTD110N02R 데이터시트(PDF) 2 Page - ON Semiconductor

NTD110N02R 데이터시트(HTML) 2 Page - ON Semiconductor

유사한 부품 번호 - NTD110N02R

유사한 설명 - NTD110N02R

Html Pages

1 2 3 4 5 6 7 8

데이터시트 다운로드

링크 URL