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JDV2S07S 데이터시트(PDF) 1 Page - Toshiba Semiconductor |
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1 / 3 page JDV2S07S 2002-01-23 1 TOSHIBA DIODE Silicon Epitaxial Planar Type JDV2S07S VCO for UHF Band Radio · High Capacitance Ratio: C1V/C4V = 2.3 (typ.) · Low Series Resistance : rs = 0.42 Ω (typ.) · This device is suitable for use in a small-size tuner. Maximum Ratings (Ta ==== 25°C) Electrical Characteristics (Ta ==== 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Reverse voltage VR IR = 1 mA 10 ¾ ¾ V Reverse current IR VR = 10 V ¾ ¾ 3 nA C1V VR = 1 V, f = 1 MHz 4.0 4.5 4.9 Capacitance C4V VR = 4 V, f = 1 MHz 1.85 2.0 2.35 pF Capacitance ratio C1V/C4V ¾ 2.0 2.3 ¾ ¾ Series resistance rs VR = 1 V, f = 470 MHz ¾ 0.42 0.55 W Note: Signal level when capacitance is measured: Vsig = 500 mVrms Marking Unit: mm JEDEC ― JEITA ― TOSHIBA 1-1K1A Weight: 0.0011 g (typ.) Characteristics Symbol Rating Unit Reverse voltage VR 10 V Junction temperature Tj 150 °C Storage temperature range Tstg -55~150 °C D |
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