SZNUP1301ML3T1G datasheet(2/4 Pages) ONSEMI

부품명	SZNUP1301ML3T1G

상세설명	Low Capacitance Diode

Download	4 Pages

Scroll/Zoom	100%

제조업체	ONSEMI [ON Semiconductor]

홈페이지	http://www.onsemi.com

Logo

2 / 4 page

NUP1301ML3T1G, SZNUP1301ML3T1G

www.onsemi.com

2

MAXIMUM RATINGS (Each Diode) (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Reverse Voltage

VR

70

Vdc

Forward Current

IF

215

mAdc

Peak Forward Surge Current

IFM(surge)

500

mAdc

Repetitive Peak Reverse Voltage

VRRM

70

V

Average Rectified Forward Current (Note 1)

(averaged over any 20 ms period)

IF(AV)

715

mA

Repetitive Peak Forward Current

IFRM

450

mA

Non−Repetitive Peak Forward Current

t = 1.0 ms

t = 1.0 S

IFSM

2.0

1.0

0.5

A

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. FR−5 = 1.0 0.75 0.062 in.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance Junction−to−Ambient

RqJA

625

°C/W

Lead Solder Temperature

Maximum 10 Seconds Duration

TL

260

°C

Junction Temperature

TJ

−65 to 150

°C

Storage Temperature

Tstg

−65 to +150

°C

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Each Diode)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Reverse Breakdown Voltage

(I(BR) = 100 mA)

V(BR)

70

−

Vdc

Reverse Voltage Leakage Current

(VR = 70 Vdc)

(VR = 25 Vdc, TJ = 150°C)

(VR = 70 Vdc, TJ = 150°C)

IR

−

2.5

30

50

mAdc

Diode Capacitance (between I/O and ground)

(VR = 0, f = 1.0 MHz)

CD

−

0.9

pF

Forward Voltage

(IF = 1.0 mAdc)

(IF = 10 mAdc)

(IF = 50 mAdc)

(IF = 150 mAdc)

VF

−

715

855

1000

1250

mVdc

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. FR−5 = 1.0 0.75 0.062 in.

3. Alumina = 0.4 0.3 0.024 in, 99.5% alumina.

4. Include SZ-prefix devices where applicable.

유사한 부품 번호 - SZNUP1301ML3T1G

제조업체	부품명	데이터시트	상세설명
ON Semiconductor	SZNUP1105LT1G	130Kb / 5P	Single Line CAN/LIN Bus Protector October, 2016 ??Rev. 6
	SZNUP1128HT1G	452Kb / 10P	IVN Bus Protector, Single Line LIN & Dual Line CAN June, 2020 ??Rev. 3
	SZNUP1128WTT1G	452Kb / 10P	IVN Bus Protector, Single Line LIN & Dual Line CAN June, 2020 ??Rev. 3

More results

유사한 설명 - SZNUP1301ML3T1G

제조업체	부품명	데이터시트	상세설명
Micro Commercial Compon...	BAP64-04W	517Kb / 3P	Low diode capacitance
Infineon Technologies A...	ESD8V0L	570Kb / 9P	Low Capacitance TVS Diode 2009-07-07
ON Semiconductor	NUP4301MR6	57Kb / 4P	Low Capacitance Diode Array September, 2014 ??Rev. 7
Shanghai Leiditech Elec...	LC12I	130Kb / 3P	LOW CAPACITANCE TVS DIODE
	LC3301CW	130Kb / 3P	LOW CAPACITANCE TVS DIODE
	LC03ILVB	816Kb / 6P	LOW CAPACITANCE TVS DIODE
	LC2511CCW	356Kb / 3P	LOW CAPACITANCE TVS DIODE
	ESD3F7VW	645Kb / 4P	LOW CAPACITANCE TVS DIODE
Diodes Incorporated	T5V0LCS5	359Kb / 4P	LOW CAPACITANCE TVS DIODE October 2021
TECH PUBLIC Electronics...	TPESD0522P	1Mb / 4P	Low Capacitance TVS Diode

More results

SZNUP1301ML3T1G 데이터시트(PDF) 2 Page - ON Semiconductor

SZNUP1301ML3T1G 데이터시트(HTML) 2 Page - ON Semiconductor

유사한 부품 번호 - SZNUP1301ML3T1G

유사한 설명 - SZNUP1301ML3T1G

Html Pages

1 2 3 4

데이터시트 다운로드

링크 URL