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JDP2S01U 데이터시트(PDF) 1 Page - Toshiba Semiconductor |
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JDP2S01U 데이터시트(HTML) 1 Page - Toshiba Semiconductor |
1 / 2 page ![]() JDP2S01U 2003-03-24 1 TOSHIBA Diode Silicon Epitaxial Pin Type JDP2S01U UHF~VHF Band RF Attenuator Applications · Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. · Low series resistance: rs = 0.65 Ω (typ.) · Low capacitance: CT = 0.7 pF (typ.) Maximum Ratings (Ta ==== 25°C) Characteristics Symbol Rating Unit Reverse voltage VR 30 V Forward current IF 50 mA Junction temperature Tj 125 °C Storage temperature range Tstg -55~125 °C Electrical Characteristics (Ta ==== 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Reverse voltage VR IR = 10 mA 30 ¾ ¾ V Reverse current IR VR = 30 V ¾ ¾ 0.1 mA Forward voltage VF IF = 50 mA ¾ 0.9 0.95 V Capacitance CT VR = 1 V, f = 1 MHz ¾ 0.7 0.9 pF Series resistance rs IF = 10 mA, f = 100 MHz ¾ 0.65 1.0 W Note: Signal level when capacitance is measured: Vsig = 20 mVrms Marking Unit: mm JEDEC ― JEITA ― TOSHIBA 1-1E1A Weight: 0.004 g (typ.) |
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