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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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TC55VBM316AFTN 데이터시트(HTML) 4 Page - Toshiba Semiconductor |
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TC55VBM316AFTN 데이터시트(HTML) 4 Page - Toshiba Semiconductor |
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TC55VBM316AFTN/ASTN40,55 2002-08-05 4/15 DC CHARACTERISTICS (Ta ==== −−−−40° to 85°C, VDD ==== 2.3 to 3.6 V) SYMBOL PARAMETER TEST CONDITION MIN TYP MAX UNIT IIL Input Leakage Current VIN = 0 V~VDD ±1.0 µA IOH Output High Current VOH = VDD − 0.5 V −0.5 mA IOL Output Low Current VOL = 0.4 V 2.1 mA ILO Output Leakage Current 1 CE = VIH or CE2 = VIL or LB = UB = VIH or R/W = VIL or OE = VIH, VOUT = 0 V~VDD ±1.0 µA MIN 35 lDDO1 1 CE = VIL and CE2 = VIH and R/W = VIH, LB = UB = VIL, IOUT = 0 mA, Other Input = VIH/VIL tcycle 1 µs 8 mA MIN 30 lDDO2 Operating Current 1 CE = 0.2 V and CE2 = VDD − 0.2 V and R/W = VDD − 0.2 V, LB = UB = 0.2 V, IOUT = 0 mA, Other Input = VDD − 0.2 V/0.2 V tcycle 1 µs 3 mA IDDS1 1) 1 CE = VIH or CE2 = VIL (at BYTE ≥ VDD − 0.2 V or ≤ 0.2 V) 2) LB = UB = VIH (at BYTE ≥ VDD − 0.2 V) 1 mA VDD = 3.3 V ± 0.3 V Ta = −40~85°C 10 Ta = 25°C 0.7 Ta = −40~40°C 2 IDDS2 Standby Current 1) 1 CE = VDD − 0.2 V, CE2 = VDD − 0.2 V (at BYTE ≥ VDD − 0.2 V or ≤ 0.2 V) 2) CE2 = 0.2 V (at BYTE ≥ VDD − 0.2 V or ≤ 0.2 V) 3) LB = UB = VDD − 0.2 V, 1 CE = 0.2 V, CE2 = VDD − 0.2 V (at BYTE ≥ VDD − 0.2 V) VDD = 3.0 V Ta = −40~85°C 5 µA CAPACITANCE (Ta ==== 25°C, f ==== 1 MHz) SYMBOL PARAMETER TEST CONDITION MAX UNIT CIN Input Capacitance VIN = GND 10 pF COUT Output Capacitance VOUT = GND 10 pF Note: This parameter is periodically sampled and is not 100% tested. |
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