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TC55VBM316AFTN ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 1 Page - Toshiba Semiconductor

๋ถ€ํ’ˆ๋ช… TC55VBM316AFTN
์ƒ์„ธ๋‚ด์šฉ  TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
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TC55VBM316AFTN/ASTN40,55
2002-08-05
1/15
TENTATIVE
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM
DESCRIPTION
The TC55VBM316AFTN/ASTN is a 8,388,608-bit static random access memory (SRAM) organized as 524,288
words by 16 bits/1,048,576 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this
device operates from a single 2.3 to 3.6 V power supply. Advanced circuit technology provides both high speed and
low power at an operating current of 3 mA/MHz and a minimum cycle time of 40 ns. It is automatically placed in
low-power mode at 0.7 ยตA standby current (at VDD = 3 V, Ta = 25ยฐC, typical) when chip enable ( CE1 ) is asserted
high or (CE2) is asserted low. There are three control inputs. CE1 and CE2 are used to select the device and for
data retention control, and output enable ( OE ) provides fast memory access. Data byte control pin ( LB , UB )
provides lower and upper byte access. This device is well suited to various microprocessor system applications
where high speed, low power and battery backup are required. And, with a guaranteed operating extreme
temperature range of โˆ’40ยฐ to 85ยฐC, the TC55VBM316AFTN/ASTN can be used in environments exhibiting extreme
temperature conditions. The TC55VBM316AFTN/ASTN is available in a plastic 48-pin thin-small-outline package
(TSOP).
FEATURES
โ€ข Low-power dissipation
Operating: 9 mW/MHz (typical)
โ€ข Single power supply voltage of 2.3 to 3.6 V
โ€ข Power down features using CE1 and CE2
โ€ข Data retention supply voltage of 1.5 to 3.6 V
โ€ข Direct TTL compatibility for all inputs and outputs
โ€ข Wide operating temperature range of โˆ’40ยฐ to 85ยฐC
โ€ข Standby Current (maximum):
3.6 V
10
ยตA
3.0 V
5
ยตA
PIN ASSIGNMENT (TOP VIEW)
PIN NAMES
48 PIN TSOP
A0~A18
Address Inputs (Word Mode)
A-1~A18
Address Inputs (Byte Mode)
1
CE
, CE2
Chip Enable
R/W
Read/Write Control
OE
Output Enable
LB , UB
Data Byte Control
I/O1~I/O16
Data Inputs/Outputs
BYTE
Byte (
ร—8 mode) Enable
VDD
Power
GND
Ground
NC
No Connection
OP*
Option
*: OP pin must be open or connected to GND.
Pin No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Pin Name
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
R/W
CE2
OP
UB
LB
A18
Pin No.
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
Pin Name
A17
A7
A6
A5
A4
A3
A2
A1
A0
1
CE
GND
OE
I/O1
I/O9
I/O2
I/O10
Pin No.
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
Pin Name
I/O3
I/O11
I/O4
I/O12
VDD
I/O5
I/O13
I/O6
I/O14
I/O7
I/O15
I/O8
I/O16
/A-1
GND
BYTE
A16
โ€ข Access Times (maximum):
TC55VBM316AFTN/ASTN
40
55
Access Time
40 ns
55 ns
1
CE
Access Time
40 ns
55 ns
CE2
Access Time
40 ns
55 ns
OE
Access Time
25 ns
30 ns
โ€ข Package:
TSOPโ… 48-P-1220-0.50 (AFTN) (Weight:0.51 g typ)
TSOPโ… 48-P-1214-0.50 (ASTN) (Weight:0.36 g typ)
(Normal)
25
48
24
1


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