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TH58100FT 데이터시트(HTML) 3 Page - Toshiba Semiconductor

부품명 TH58100FT
상세내용  TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
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제조사  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
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TH58100FT 데이터시트(HTML) 3 Page - Toshiba Semiconductor

 
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TH58100FT
2001-03-05
3/43
VALID BLOCKS (1)
SYMBOL
PARAMETER
MIN
TYP.
MAX
UNIT
NVB
Number of Valid Blocks
8032
¾
8192
Blocks
(1) The TH58100 occasionally contains unusable blocks. Refer to Application Note (14) toward the end of this document.
RECOMMENDED DC OPERATING CONDITIONS
SYMBOL
PARAMETER
MIN
TYP.
MAX
UNIT
VCC
Power Supply Voltage
2.7
3.3
3.6
V
VIH
High Level input Voltage
2.0
¾
VCC + 0.3
V
VIL
Low Level Input Voltage
-0.3*
¾
0.8
V
*
-2 V (pulse width lower than 20 ns)
DC CHARACTERISTICS (Ta
==== 0° to 70°C, VCC ==== 2.7 V to 3.6 V)
SYMBOL
PARAMETER
CONDITION
MIN
TYP.
MAX
UNIT
IIL
Input Leakage Current
VIN = 0 V to VCC
¾
¾
±10
mA
ILO
Output Leakage Current
VOUT = 0.4 V to VCC
¾
¾
±10
mA
ICCO1
Operating Current (Serial Read)
CE
= VIL, IOUT = 0 mA, tcycle = 50 ns
¾
10
30
mA
ICCO3
Operating Current
(Command Input)
tcycle = 50 ns
¾
10
30
mA
ICCO4
Operating Current (Data Input)
tcycle = 50 ns
¾
10
30
mA
ICCO5
Operating Current
(Address Input)
tcycle = 50 ns
¾
10
30
mA
ICCO7
Programming Current
¾
¾
10
30
mA
ICCO8
Erasing Current
¾
¾
10
30
mA
ICCS1
Standby Current
CE
= VIH
¾
¾
1
mA
ICCS2
Standby Current
CE
= VCC - 0.2 V
¾
¾
100
mA
VOH
High Level Output Voltage
IOH = -400 mA
2.4
¾
¾
V
VOL
Low Level Output Voltage
IOL = 2.1 mA
¾
¾
0.4
V
IOL (
BY
/
RY
)
Output Current of
BY
/
RY
pin
VOL = 0.4 V
¾
8
¾
mA


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