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GT50J325 데이터시트(PDF) 1 Page - Toshiba Semiconductor |
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GT50J325 데이터시트(HTML) 1 Page - Toshiba Semiconductor |
1 / 7 page GT50J325 1 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Fast Switching Applications · The 4th generation · Enhancement-mode · Fast switching (FS): Operating frequency up to 50 kHz (reference) · High speed: tf = 0.05 µs (typ.) · Low switching loss: Eon = 1.30 mJ (typ.) : Eoff = 1.34 mJ (typ.) · Low saturation Voltage: VCE (sat) = 2.0 V (typ.) · FRD included between emitter and collector Maximum Ratings (Ta ==== 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES ±20 V DC IC 50 Collector current 1 ms ICP 100 A DC IF 50 Emitter-collector forward current 1 ms IFM 100 A Collector power dissipation (Tc = 25°C) PC 240 W Junction temperature Tj 150 °C Storage temperature range Tstg -55 to 150 °C Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance (IGBT) Rth (j-c) 0.521 °C/W Thermal resistance (diode) Rth (j-c) 2.30 °C/W Equivalent Circuit Unit: mm JEDEC ― JEITA ― TOSHIBA 2-21F2C Weight: 9.75 g Gate Emitter Collector |
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