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SS36F 데이터시트(PDF) 1 Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD |
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SS36F 데이터시트(HTML) 1 Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD |
1 / 3 page Maximum DC Blocking Voltage Parameter Maximum Repetitive Peak Reverse Voltage Maximum RMS voltage Maximum Average Forward Rectified Current 20 40 V 14 28 V V 3.0 0.5 5 -55 ~ +150 A A V mA °C Units Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200 V Forward Current - 3.0A Absolute Maximum Ratings and Electrical characteristics Ratings at ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load, for capacitive load, derate by 20 % 25 °C 20 40 Peak Forward Surge Current,8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) Max Instantaneous Forward Voltage at 3 A Maximum DC Reverse Current at Rated DC Reverse Voltage Operating Junction Temperature Range SS32F SS34F SS34AF SS36F SS38F SS310F SS312F SS315F SS320F T = 25 °C a T =100 °C a VRRM VRMS VDC IF(AV) IFSM VF IR Tj Symbols Tstg Storage Temperature Range 60 42 60 80 56 80 100 100 0.55 0.70 0.85 -55 ~ +150 °C 120 120 150 105 150 200 140 200 0.95 0.3 3 70 80 70 84 Features • Metal silicon junction, majority carrier conduction • For surface mounted applications • Low power loss, high efficiency • High forward surge current capability • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications MECHANICAL DATA • Case: SMAF • Terminals: Solderable per MIL-STD-750, Method 2026 • 27mg / 0.00095oz Approx. Weight: 45 31.5 45 PINNING PIN 1 2 DESCRIPTION Cathode Anode Simplified outline SMAF and symbol Top View Marking Code: SS32 — SS320 1 2 70 Typical Thermal Resistance °C/W RθJA SS32F THRU SS320F Typical Junction Capacitance pF Cj 250 180 (1) (2) Measured at 1 MHz and applied reverse voltage of 4 V D.C (2) (1) P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas. www.yfwdiode.com |
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