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GS82582QT19GE-300I 데이터시트(PDF) 11 Page - GSI Technology |
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GS82582QT19GE-300I 데이터시트(HTML) 11 Page - GSI Technology |
11 / 26 page Capacitance oC, f = 1 MHZ, VDD = 1.8 V) Parameter Symbol Test conditions Typ. Max. Unit Input Capacitance CIN VIN = 0 V 4 5 pF Output Capacitance COUT VOUT = 0 V 6 7 pF Clock Capacitance CCLK VIN = 0 V 5 6 pF Note: This parameter is sample tested. AC Test Conditions Parameter Conditions Input high level 1.25 Input low level 0.25 V Max. input slew rate 2 V/ns Input reference level 0.75 Output reference level VDDQ/2 Note: Test conditions as specified with output loading as shown unless otherwise noted. GS82582QT19/37GE-400/375/333/300 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Rev: 1.03 4/2016 11/25 © 2012, GSI Technology DQ VT == 0.75 V 50 RQ = 250 (HSTL I/O) VREF = 0.75 V AC Test Load Diagram Input and Output Leakage Characteristics Parameter Symbol Test Conditions Min. Max Input Leakage Current (except mode pins) IIL VIN = 0 to VDD –2 uA 2 uA Doff IILDOFF VIN = 0 to VDD –20 uA 2 uA ODT IIL ODT VIN = 0 to VDD –2 uA 20 uA Output Leakage Current IOL Output Disable, VOUT = 0 to VDDQ –2 uA 2 uA (TA = 25 |
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