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STX790A 데이터시트(HTML) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

부품명 STX790A
상세내용  Silicon PNP transistor in a TO-92 Plastic Package
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제조사  FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]
홈페이지  http://www.fsbrec.com/
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STX790A 데이터시트(HTML) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

   
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STX790A
Rev.E Mar.-2016
DATA SHEET
http://www.fsbrec.com
2 / 6
参数
Parameter
符号
Symbol
数值
Rating
单位
Unit
Collector to Base Voltage
VCBO
-60
V
Collector to Emitter Voltage
VCEO
-60
V
Emitter to Base Voltage
VEBO
-5.0
V
Collector Current - Continuous
IC
-3.0
A
Peak Collector Current- Continuous
ICM
-6.0
A
Collector Power Dissipation
PC
0.9
W
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55~150
参数
Parameter
符号
Symbol
测试条件
Test Conditions
最小值
Min
典型值
Typ
最大值
Max
单位
Unit
Collector to Base Breakdown
Voltage
VCBO
IC=-100μA
IE=0
-60
V
Collector to Emitter
Breakdown Voltage*
*VCEO
IC=-10mA
IB=0
-60
V
Emitter to Base Breakdown
Voltage
VEBO
IE=-100μA
IC=0
-5.0
V
Collector Cut-Off Current
ICBO
VCB=-30V
IE=0
-0.1
μA
Emitter Cut-Off Current
IEBO
VEB=-4.0V
IC=0
-1.0
μA
DC Current Gain
*hFE(1)
VCE=-2.0V
IC=-500mA
100
200
300
*hFE(2)
VCE=-2.0V
IC=-10mA
100
200
*hFE(3)
VCE=-1.0V
IC=-3.0A
90
130
Collector to Emitter Saturation
Voltage
*VCE(sat)(1)
IC=-0.5A
IB=-50mA
-0.15
V
*VCE(sat)(2)
IC=-1.0A
IB=-100mA
-0.3
V
*VCE(sat)(3)
IC=-2.0A
IB=-200mA
-0.5
V
*VCE(sat)(4)
IC=-3.0A
IB=-300mA
-0.7
V
Base to Emitter Saturation
Voltage*
*VBE(sat)
IC=-1.0A
IB=-100mA
-0.8
-1.0
V
Base to Emitter Voltage
VBE
VCE=-2.0V
IC=-1.0A
-0.8
-1.0
V
Transition Frequency
fT
VCE=-5.0V
IC=-50mA
f=50MHz
100
V
Delay Time
td
VCC=-20V
IC=-3.0A
IB1=-IB2=-60mA
180
220
ns
Rise Time
tr
VCC=-20V
IC=-3.0A
IB1=-IB2=-60mA
160
210
ns
Storage Time
ts
VCC=-20V
IC=-3.0A
IB1=-IB2=-60mA
250
300
ns
Fall Time
tf
VCC=-20V
IC=-3.0A
IB1=-IB2=-60mA
80
100
ns
* Pulse test: pulse width =300
μs, duty cycle ≤1.5%.
脉冲测试:脉宽=300μs,占空比≤1.5%。
极限参数 / Absolute Maximum Ratings(Ta=25℃)
电性能参数 / Electrical Characteristics(Ta=25℃)


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