2SC1654 datasheet(1/4 Pages) JIANGSU

부품명	2SC1654

상세설명	SOT-23 Plastic-Encapsulate Transistors

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제조업체	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

홈페이지	http://www.cj-elec.com/en/

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors

2SC1654

TRANSISTOR (NPN)

FEATURES

 High Frequency Power Amplifier Application

 Power Swithing Applications

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

180

V

VCEO

Collector-Emitter Voltage

160

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current

50

mA

PC

Collector Power Dissipation

150

mW

RΘJA

Thermal Resistance From Junction To Ambient

833

℃/W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55～+150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=100µA, IE=0

180

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=1mA, IB=0

160

V

Emitter-base breakdown voltage

V(BR)EBO

IE=100µA, IC=0

5

V

Collector cut-off current

ICBO

VCB=130V, IE=0

0.1

µA

Emitter cut-off current

IEBO

VEB=5V, IC=0

0.1

µA

hFE(1)

VCE=3V, IC=15mA

90

400

DC current gain

hFE(2)

VCE=3V, IC=1mA

70

Collector-emitter saturation voltage

VCE(sat)

IC=50mA, IB=5mA

0.3

V

Base-emitter saturation voltage

VBE(sat)

IC=50mA, IB=5mA

1

V

Transition frequency

fT

VCE=10V,IC=10mA

120

MHz

Collector output capacitance

Cob

VCB=10V, IE=0, f=1MHz

2.3

pF

CLASSIFICATION OF hFE(1)

RANK

N5

N6

N7

RANGE

90–180

135–270

200–400

MARKING

N5

N6

N7

SOT–23

1. BASE

2. EMITTER

3. COLLECTOR

www.cj-elec.com

1

A,Jun,2014

www.cj-elec.com

C,Aug,2015

JC T

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