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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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TC55NEM208A 데이터시트(HTML) 3 Page - Toshiba Semiconductor |
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TC55NEM208A 데이터시트(HTML) 3 Page - Toshiba Semiconductor |
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TC55NEM208AFPN/AFTN55,70 2002-09-18 3/10 DC RECOMMENDED OPERATING CONDITIONS (Ta = −40° to 85°C) SYMBOL PARAMETER MIN TYP MAX UNIT VDD Power Supply Voltage 4.5 5.0 5.5 V VIH Input High Voltage 2.2 VDD + 0.3 V VIL Input Low Voltage −0.3* 0.6 V VDH Data Retention Supply Voltage 2.0 5.5 V *: −2.0 V when measured at a pulse width of 20 ns DC CHARACTERISTICS (Ta = −40° to 85°C, VDD = 5 V ± 10%) SYMBOL PARAMETER TEST CONDITION MIN TYP MAX UNIT IIL Input Leakage Current VIN = 0 V~VDD ±1.0 µA IOH Output High Current VOH = 2.4 V −1.0 mA IOL Output Low Current VOL = 0.4 V 2.1 mA ILO Output Leakage Current CE = VIH or R/W = VIL or OE = VIH, VOUT = 0 V~VDD ±1.0 µA MIN 35 lDDO1 CE = VIL and R/W = VIH, IOUT = 0 mA, Other Input = VIH/VIL 1 µs 8 mA MIN 30 lDDO2 Operating Current CE = 0.2 V and R/W = VDD − 0.2 V, IOUT = 0 mA, Other Input = VDD − 0.2 V/0.2 V tcycle 1 µs 3 mA IDDS1 CE = VIH 3 mA Ta = 25°C 1 Ta = −40~40°C 3 IDDS2 Standby Current CE = VDD − 0.2 V, VDD = 2.0 V~5.5 V Ta = −40~85°C 20 µA CAPACITANCE (Ta = 25°C, f = 1 MHz) SYMBOL PARAMETER TEST CONDITION MAX UNIT CIN Input Capacitance VIN = GND 10 pF COUT Output Capacitance VOUT = GND 10 pF Note: This parameter is periodically sampled and is not 100% tested. |
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