2SC2983 datasheet(1/3 Pages) JIANGSU

부품명	2SC2983

상세설명	TO-251-3L Plastic-Encapsulate Transistors

Download	3 Pages

Scroll/Zoom	100%

제조업체	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

홈페이지	http://www.cj-elec.com/en/

Logo

1 / 3 page

TO-251-3L

1. BASE

2. COLLECTOR

3. EMITTER

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-251-3L Plastic-Encapsulate Transistors

2SC2983

TRANSISTOR (NPN)

FEATURES

High Transition Frequency

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=1mA,IE=0

160

V

Collector-emitter breakdown voltage

V(BR)CEO

*

IC=10mA,IB=0

160

V

Emitter-base breakdown voltage

V(BR)EBO

IE=1mA,IC=0

5

V

Collector cut-off current

ICBO

VCB=160V,IE=0

1

μA

Emitter cut-off current

IEBO

VEB=5V,IC=0

1

μA

DC current gain

hFE

VCE=5V, IC=100mA

70

240

Collector-emitter saturation voltage

VCE(sat)

IC=500mA,IB=50mA

1.5

V

Base-emitter voltage

VBE

VCE=5V, IC=500mA

1

V

Collector output capacitance

Cob

VCB=10V,IE=0, f=1MHz

25

pF

Transition frequency

fT

VCE=10V,IC=100mA,

100

MHz

*Pulse test

CLASSIFICATION OF hFE

RANK

O

Y

RANGE

70-140

120-240

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

160

V

VCEO

Collector-Emitter Voltage

160

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current

1.5

A

PC

Collector Power Dissipation

1

W

RθJA

Thermal Resistance From Junction To Ambient

125

℃/W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~+150

℃

www.cj-elec.com

1

D,Nov,2014

유사한 부품 번호 - 2SC2983

제조업체	부품명	데이터시트	상세설명
Toshiba Semiconductor	2SC2983	139Kb / 2P	TRANSISTOR (POWER, DIRVER STAGE AMPLIFIER APPLICATIONS)
Guangdong Kexin Industr...	2SC2983	39Kb / 1P	NPN Silicon Epitaxial Transistor
Toshiba Semiconductor	2SC2983	155Kb / 4P	Power Amplifier Applications Driver Stage Amplifier Applications
Inchange Semiconductor ...	2SC2983	383Kb / 4P	isc Silicon NPN Power Transistor
Toshiba Semiconductor	2SC2983	1Mb / 73P	Bipolar Small-Signal Transistors

More results

유사한 설명 - 2SC2983

제조업체	부품명	데이터시트	상세설명
Jiangsu Changjiang Elec...	3DA752	348Kb / 2P	TO-251-3L Plastic-Encapsulate Transistors
	2SA1700	766Kb / 3P	TO-251-3L Plastic-Encapsulate Transistors
	2SD1802	1Mb / 3P	TO-251-3L Plastic-Encapsulate Transistors
	D882M	1Mb / 3P	TO-251-3L Plastic-Encapsulate Transistors
	MJD31C	913Kb / 3P	TO-251-3L Plastic-Encapsulate Transistors
	2SB1202	432Kb / 2P	TO-251-3L Plastic-Encapsulate Transistors
	2SB1412	458Kb / 2P	TO-251-3L Plastic-Encapsulate Transistors
	2SC3303	289Kb / 3P	TO-251-3L Plastic-Encapsulate Transistors
	2SD2118	558Kb / 2P	TO-251-3L Plastic-Encapsulate Transistors
	2SA1615	220Kb / 2P	TO-251-3L Plastic-Encapsulate Transistors
	2SC4003	373Kb / 2P	TO-251-3L Plastic-Encapsulate Transistors

More results

2SC2983 데이터시트(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

2SC2983 데이터시트(HTML) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

유사한 부품 번호 - 2SC2983

유사한 설명 - 2SC2983

Html Pages

1 2 3

데이터시트 다운로드

링크 URL