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LA-100-P 데이터시트(PDF) 1 Page - LEM

부품명 LA-100-P
상세설명  Current Transducer LA 100-P
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제조업체  LEM [LEM]
홈페이지  http://www.lem.co.jp/HQ/en
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LA-100-P 데이터시트(HTML) 1 Page - LEM

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27January2016/version 12
LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice
www.lem.com
N° 97.09.34.000.0
I
PN = 100 A
Features
● Closed loop (compensated)
current transducer using the Hall
effect
● Insulated plastic case recognized
according to UL 94-V0.
Advantages
● Excellent accuracy
● Very good linearity
● Low temperature drift
● Optimized response time
● Wide frequency bandwidth
● No insertion losses
● High immunity to external
interference
● Current overload capability.
Applications
● AC variable speed drives and
servo motor drives
● Static converters for DC motor
drives
● Battery supplied applications
● Uninterruptible Power Supplies
(UPS)
● Switched Mode Power Supplies
(SMPS)
● Power supplies for welding
applications.
Application domain
● Industrial.
Current Transducer LA 100-P
For the electronic measurement of currents: DC, AC, pulsed...,
with galvanic separation between the primary circuit and the secondary
circuit.
Electrical data
I
PN
Primary nominal rms current
100
A
I
PM
Primary current, measuring range
0 ... ±150
A
R
M
Measuring resistance @
T
A = 70 °C
T
A = 85 °C
R
M minRM max
R
M minRM max
with ±12 V
@ ±100 A
max
0
50
0
42
@ ±120 A
max
0
22
0
14
with ±15 V
@ ±100 A
max
0
110
20
102
@ ±150 A
max
0
33
20
25
I
SN
Secondary nominal rms current
50
mA
K
N
Conversion ratio
1 : 2000
U
C
Supply voltage (±5 %)
±12 … 15
V
I
C
Current consumption
10 (@ ±15 V) + I
S
mA
Accuracy - Dynamic performance data
X
Accuracy @ I
PN, TA = 25 °C @ ±15 V (±5 %)
±0.45
%
@ ±12 … 15 V (±5 %)
±0.70
%
ε
L
Linearity error
< 0.15
%
Typ
Max
I
O
Offset current @ I
P = 0, TA = 25 °C
±0.10
mA
I
OM
Magnetic offset current 1) @ I
P = 0 and specified RM,
after an overload of 3 × I
PN
±0.15
mA
I
OT
Temperature variation of I
O
−25 °C … +85 °C
±0.05 ±0.30
mA
−40 °C … −25 °C
±0.10 ±0.50
mA
t
ra
Reaction time
< 500
ns
t
r
Step response time 2) to 90 % of I
PN
< 1
µs
di/dt
di/dt accurately followed
> 200
A/µs
BW
Frequency bandwidth (−1 dB)
DC … 200
kHz
General data
T
A
Ambient operating temperature
−40 … +85
°C
T
S
Ambient storage temperature
−40 … +90
°C
R
S
Resistance of secondary winding @ T
A = 70 °C
120
@ T
A = 85 °C
128
m
Mass
18
g
Standards
EN 50178: 1997
UL 508: 2010
Notes: 1) Result of the coercive field of the magnetic circuit
2)
With a di/dt of 100 A/µs.


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