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KTA968A ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

๋ถ€ํ’ˆ๋ช… KTA968A
์ƒ์„ธ๋‚ด์šฉ  TO-220-3L Plastic-Encapsulate Transistors
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์ œ์กฐ์‚ฌ  JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]
ํ™ˆํŽ˜์ด์ง€  http://www.cj-elec.com/en/
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KTA968A ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

   
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TO-220-3L
1. BASE
2. COLLECTOR
3. EMITTER
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate Transistors
KTA968A
TRANSISTOR (PNP)
FEATURES
High Transition Frequency
High Voltage Applications
MAXIMUM RATINGS (Ta=25
โ„ƒ unless otherwise noted)
ELECTRICAL CHARACTERISTICS (Ta=25
โ„ƒ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=-100ยตA,IE=0
-180
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-10mA,IB=0
-180
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-1mA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-160V,IE=0
-1
ฮผA
Emitter cut-off current
IEBO
VEB=-5V,IC=0
-1
ฮผA
DC current gain
hFE
VCE=-5V, IC=-100mA
70
240
Collector-emitter saturation voltage
VCE(sat)
IC=-500mA,IB=-50mA
-1.5
V
Base-emitter voltage
VBE
VCE=-5V, IC=-500mA
-1
V
Collector output capacitance
Cob
VCB=-10V,IE=0, f=1MHz
30
pF
Transition frequency
fT
VCE=-10V,IC=-100mA
100
MHz
CLASSIFICATION OF hFE
RANK
O
Y
RANGE
70-140
120-240
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-180
V
VCEO
Collector-Emitter Voltage
-180
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current
-1.5
A
PC
Collector Power Dissipation
2
W
RฮธJA
Thermal Resistance From Junction To Ambient
63
โ„ƒ/W
Tj
Junction Temperature
150
โ„ƒ
Tstg
Storage Temperature
-55~+150
โ„ƒ
www.cj-elec.com
1
B,Nov,2014


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