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AM7470NA 데이터시트(PDF) 1 Page - Analog Power |
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1 / 5 page Analog Power AM7470NA N-Channel 120-V (D-S) MOSFET VDS (V) ID (A) 13 12 Symbol Limit Units VDS 120 VGS ±20 TA=25°C 13 TA=70°C 10 IDM 50 IS 6.7 A TA=25°C 5 TA=70°C 3.2 TJ, Tstg -55 to 150 °C Symbol Maximum Units 25 65 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Pulsed Drain Current b Continuous Source Current (Diode Conduction) a THERMAL RESISTANCE RATINGS °C/W Parameter Operating Junction and Storage Temperature Range ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) V Parameter Drain-Source Voltage Maximum Junction-to-Ambient a Continuous Drain Current a PRODUCT SUMMARY 120 rDS(on) (mΩ) 21 @ VGS = 10V 24 @ VGS = 4.5V Gate-Source Voltage Power Dissipation a t <= 10 sec Steady State RθJA ID A PD W Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits DFN5X6-8L © Preliminary 1 Publication Order Number: DS_AM7470NA_1A |
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