TSHF6410_11 datasheet(3/5 Pages) VISHAY

부품명	TSHF6410

상세설명	High Speed Infrared Emitting Diode

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제조업체	VISHAY [Vishay Siliconix]

홈페이지	http://www.vishay.com

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TSHF6410

www.vishay.com

Vishay Semiconductors

Rev. 1.3, 23-Aug-11

3

Document Number: 81832

For technical questions, contact: emittertechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 2 - Pulse Forward Current vs. Pulse Duration

Fig. 3 - Forward Current vs. Forward Voltage

Fig. 4 - Radiant Intensity vs. Forward Current

Fig. 5 - Radiant Power vs. Forward Current

Fig. 6 - Relative Radiant Power vs. Wavelength

Fig. 7 - Relative Radiant Intensity vs. Angular Displacement

100

1000

0.01

0.1

1

10

100

tp -Pulse Duration (ms)

16031

t

p/T = 0.01

0.05

0.2

0.5

0.1

0.02

T

amb < 50 °C

18873

1000

100

10

1

VF - Forward Voltage (V)

02

4

t

p = 100 µs

t

p/T = 0.001

13

0.1

1

10

100

1000

1

10

100

1000

18220

IF - Forward Current (mA)

0.1

1

10

100

1000

110

100

1000

16971

IF - Forward Current (mA)

800

900

λ - Wavelength (nm)

1000

20082

0

0.25

0.5

0.75

1.0

1.25

94 8883

0.6

0.9

0.8

0°

30°

10°

20°

40°

50°

60°

70°

80°

0.7

1.0

0

0.2

0.4

유사한 부품 번호 - TSHF6410_11

제조업체	부품명	데이터시트	상세설명
Vishay Siliconix	TSHF6410	111Kb / 5P	High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero Rev. 1.2, 25-Jun-09
	TSHF6410	113Kb / 5P	High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero 01-Jan-2022
	TSHF6410	113Kb / 5P	High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero 01-Jan-2023

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유사한 설명 - TSHF6410_11

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Sharp Corporation	GL550	38Kb / 4P	High Speed Infrared Emitting Diode
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TSHF6410 데이터시트(PDF) 3 Page - Vishay Siliconix

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유사한 부품 번호 - TSHF6410_11

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